CHM8912JGP Todos los transistores

 

CHM8912JGP MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: CHM8912JGP
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 2 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 7 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 3 V
   Qgⓘ - Carga de la puerta: 20 nC
   trⓘ - Tiempo de subida: 7 nS
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.028 Ohm
   Paquete / Cubierta: SO-8

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CHM8912JGP Datasheet (PDF)

 ..1. Size:91K  chenmko
chm8912jgp.pdf

CHM8912JGP
CHM8912JGP

CHENMKO ENTERPRISE CO.,LTDCHM8912JGPSURFACE MOUNT Dual N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 30 Volts CURRENT 7 AmpereAPPLICATION* Servo motor control. * Power MOSFET gate drivers.* Other switching applications.SO-8FEATURE* Small flat package. (SO-8 )( )* High density cell design for extremely low RDS(ON). 4.06 0.160( )3.70 0.146* Rugged and

 9.1. Size:92K  chenmko
chm8933ajgp.pdf

CHM8912JGP
CHM8912JGP

CHENMKO ENTERPRISE CO.,LTDCHM8933AJGPSURFACE MOUNT Dual P-Channel Enhancement Mode Field Effect Transistor VOLTAGE 20 Volts CURRENT 4.6 AmpereAPPLICATION* Servo motor control. * Power MOSFET gate drivers.* Other switching applications.SO-8FEATURE* Small flat package. (SO-8 )( )* Super high dense cell design for extremely low RDS(ON). 4.06 0.160( )3.70 0.146* High

 9.2. Size:110K  chenmko
chm8938jgp.pdf

CHM8912JGP
CHM8912JGP

CHENMKO ENTERPRISE CO.,LTDSURFACE MOUNT CHM8938JGPDual Enhancement Mode Field Effect TransistorN-channel: VOLTAGE 30 Volts CURRENT 7 AmpereP-channel: VOLTAGE 30 Volts CURRENT 6 AmpereAPPLICATION* Servo motor control. * Power MOSFET gate drivers.* Other switching applications.SO-8FEATURE* Small flat package. (SO-8 )( )* Super high dense cell design for extremely low RDS

 9.3. Size:110K  chenmko
chm8968jgp.pdf

CHM8912JGP
CHM8912JGP

CHENMKO ENTERPRISE CO.,LTDSURFACE MOUNT CHM8968JGPDual Enhancement Mode Field Effect TransistorN-channel: VOLTAGE 30 Volts CURRENT 7 AmpereP-channel: VOLTAGE 30 Volts CURRENT 6.2 AmpereAPPLICATION* Servo motor control. * Power MOSFET gate drivers.* Other switching applications.SO-8FEATURE* Small flat package. (SO-8 )( )* Super high dense cell design for extremely low R

 9.4. Size:128K  chenmko
chm8958jgp.pdf

CHM8912JGP
CHM8912JGP

CHENMKO ENTERPRISE CO.,LTDSURFACE MOUNT CHM8958JGPDual Enhancement Mode Field Effect TransistorN-channel: VOLTAGE 30 Volts CURRENT 7 AmpereP-channel: VOLTAGE 30 Volts CURRENT 5.2 AmpereAPPLICATION* Servo motor control. * Power MOSFET gate drivers.* Other switching applications.SO-8FEATURE* Small flat package. (SO-8 )( )* Super high dense cell design for extremely low R

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