CMLDM5757 Todos los transistores

 

CMLDM5757 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: CMLDM5757

Código: 77C

Tipo de FET: MOSFET

Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 0.35 W

Tensión drenaje-fuente (Vds): 20 V

Tensión compuerta-fuente (Vgs): 8 V

Corriente continua de drenaje (Id): 0.43 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Tensión umbral compuerta-fuente Vgs(th): 1 V

Carga de compuerta (Qg): 1.2 nC

Conductancia de drenaje-sustrato (Cd): 30 pF

Resistencia drenaje-fuente RDS(on): 0.9 Ohm

Empaquetado / Estuche: SOT-563

Búsqueda de reemplazo de MOSFET CMLDM5757

 

CMLDM5757 Datasheet (PDF)

1.1. cmldm5757.pdf Size:585K _update_mosfet

CMLDM5757
CMLDM5757

CMLDM5757 SURFACE MOUNT www.centralsemi.com DUAL P-CHANNEL DESCRIPTION: ENHANCEMENT-MODE The CENTRAL SEMICONDUCTOR CMLDM5757 SILICON MOSFETS consists of Dual P-Channel Enhancement-mode silicon MOSFETs designed for high speed pulsed amplifier and driver applications. These MOSFETs offer Very Low rDS(ON) and Low Threshold Voltage. MARKING CODE: 77C FEATURES: • ESD Protection u

5.1. cmldm8120.pdf Size:511K _update_mosfet

CMLDM5757
CMLDM5757

CMLDM8120 CMLDM8120G* www.centralsemi.com SURFACE MOUNT P-CHANNEL DESCRIPTION: ENHANCEMENT-MODE These CENTRAL SEMICONDUCTOR devices SILICON MOSFET are Enhancement-mode P-Channel Field Effect Transistors, manufactured by the P-Channel DMOS Process, designed for high speed pulsed amplifier and driver applications. This MOSFET offers Low rDS(on) and Low Theshold Voltage. MARKING

5.2. cmldm7484.pdf Size:587K _update_mosfet

CMLDM5757
CMLDM5757

CMLDM7484 SURFACE MOUNT www.centralsemi.com N-CHANNEL AND P-CHANNEL DESCRIPTION: ENHANCEMENT-MODE The CENTRAL SEMICONDUCTOR CMLDM7484 COMPLEMENTARY MOSFETS consists of complementary N-Channel and P-Channel Enhancement-mode silicon MOSFETs designed for high speed pulsed amplifier and driver applications. These MOSFETs offer Very Low rDS(ON) and Low Threshold Voltage. MARKING CO

 5.3. cmldm7003e cmldm7003je.pdf Size:521K _update_mosfet

CMLDM5757
CMLDM5757

CMLDM7003E CMLDM7003JE ENHANCED SPECIFICATION www.centralsemi.com SURFACE MOUNT DESCRIPTION: DUAL N-CHANNEL The CENTRAL SEMICONDUCTOR CMLDM7003E ENHANCEMENT-MODE and CMLDM7003JE are Enhancement-mode SILICON MOSFET N-Channel Field Effect Transistors, manufactured by the N-Channel DMOS Process, designed for high speed pulsed amplifier and driver applications. The CMLDM7003E uti

5.4. cmldm7120 cmldm7120g.pdf Size:534K _update_mosfet

CMLDM5757
CMLDM5757

CMLDM7120G SURFACE MOUNT www.centralsemi.com N-CHANNEL DESCRIPTION: ENHANCEMENT-MODE The CENTRAL SEMICONDUCTOR CMLDM7120G SILICON MOSFET is an Enhancement-mode N-Channel Field Effect Transistor, manufactured by the N-Channel DMOS Process, designed for high speed pulsed amplifier and driver applications. This MOSFET offers Low rDS(ON) and Low Threshold Voltage. MARKING CODE: C7

 5.5. cmldm8002aj cmldm8002a cmldm8002ag.pdf Size:518K _update_mosfet

CMLDM5757
CMLDM5757

CMLDM8002A CMLDM8002AG* CMLDM8002AJ www.centralsemi.com SURFACE MOUNT DESCRIPTION: DUAL P-CHANNEL These CENTRAL SEMICONDUCTOR devices are ENHANCEMENT-MODE dual chip Enhancement-mode P-Channel Field Effect SILICON MOSFET Transistors, manufactured by the P-Channel DMOS Process, designed for high speed pulsed amplifier and driver applications. The CMLDM8002A utilizes the USA pin

5.6. cmldm7003t.pdf Size:713K _update_mosfet

CMLDM5757
CMLDM5757

CMLDM7003TG SURFACE MOUNT SILICON www.centralsemi.com DUAL N-CHANNEL DESCRIPTION: ENHANCEMENT-MODE MOSFET The CENTRAL SEMICONDUCTOR CMLDM7003TG is a dual N-Channel enhancement-mode MOSFET, manufactured by the N-Channel DMOS Process, designed for high speed pulsed amplifier and driver applications. This device offers low rDS(ON), low VGS(th), and ESD protection up to 2kV. MARKIN

5.7. cmldm3757.pdf Size:589K _update_mosfet

CMLDM5757
CMLDM5757

CMLDM3757 SURFACE MOUNT www.centralsemi.com N-CHANNEL AND P-CHANNEL DESCRIPTION: ENHANCEMENT-MODE The CENTRAL SEMICONDUCTOR CMLDM3757 COMPLEMENTARY MOSFETS consists of complementary N-Channel and P-Channel Enhancement-mode silicon MOSFETs designed for high speed pulsed amplifier and driver applications. These MOSFETs offer Very Low rDS(ON) and Low Threshold Voltage. MARKING CO

5.8. cmldm8005.pdf Size:586K _update_mosfet

CMLDM5757
CMLDM5757

CMLDM8005 SURFACE MOUNT www.centralsemi.com DUAL P-CHANNEL DESCRIPTION: ENHANCEMENT-MODE The CENTRAL SEMICONDUCTOR CMLDM8005 SILICON MOSFETS consists of Dual P-Channel Enhancement-mode silicon MOSFETs designed for high speed pulsed amplifier and driver applications. These MOSFETs offer Very Low rDS(ON) and Low Threshold Voltage. MARKING CODE: CC8 FEATURES: • ESD Protection u

5.9. cmldm7005.pdf Size:665K _update_mosfet

CMLDM5757
CMLDM5757

CMLDM7005 CMLDM7005R www.centralsemi.com SURFACE MOUNT DUAL N-CHANNEL DESCRIPTION: ENHANCEMENT-MODE These CENTRAL SEMICONDUCTOR devices are SILICON MOSFET dual N-Channel enhancement-mode silicon MOSFETs designed for high speed pulsed amplifier and driver applications. These MOSFETs offer very low rDS(ON) and low threshold voltage. The CMLDM7005R utilizes a reverse pinout confi

5.10. cmldm7003 cmldm7003j.pdf Size:518K _update_mosfet

CMLDM5757
CMLDM5757

CMLDM7003 CMLDM7003G* CMLDM7003J www.centralsemi.com SURFACE MOUNT DESCRIPTION: DUAL N-CHANNEL These CENTRAL SEMICONDUCTOR devices ENHANCEMENT-MODE are dual Enhancement-mode N-Channel Field Effect SILICON MOSFET Transistors, manufactured by the N-Channel DMOS Process, designed for high speed pulsed amplifier and driver applications. The CMLDM7003 utilizes the USA pinout confi

5.11. cmldm7002a cmldm7002aj.pdf Size:623K _update_mosfet

CMLDM5757
CMLDM5757

CMLDM7002A CMLDM7002AG* CMLDM7002AJ www.centralsemi.com SURFACE MOUNT DESCRIPTION: DUAL N-CHANNEL These CENTRAL SEMICONDUCTOR devices are ENHANCEMENT-MODE SILICON MOSFET dual Enhancement-mode N-Channel Field Effect Transistors, manufactured by the N-Channel DMOS Process, designed for high speed pulsed amplifier and driver applications. The CMLDM7002A utilizes the USA pinout co

5.12. cmldm3737.pdf Size:586K _update_mosfet

CMLDM5757
CMLDM5757

CMLDM3737 SURFACE MOUNT www.centralsemi.com DUAL N-CHANNEL DESCRIPTION: ENHANCEMENT-MODE The CENTRAL SEMICONDUCTOR CMLDM3737 SILICON MOSFETS consists of Dual N-Channel Enhancement-mode silicon MOSFETs designed for high speed pulsed amplifier and driver applications. These MOSFETs offer Very Low rDS(ON) and Low Threshold Voltage. MARKING CODE: 7C3 FEATURES: • ESD Protection u

5.13. cmldm7585.pdf Size:587K _update_mosfet

CMLDM5757
CMLDM5757

CMLDM7585 SURFACE MOUNT www.centralsemi.com N-CHANNEL AND P-CHANNEL DESCRIPTION: ENHANCEMENT-MODE The CENTRAL SEMICONDUCTOR CMLDM7585 COMPLEMENTARY MOSFETS consists of complementary N-Channel and P-Channel Enhancement-mode silicon MOSFETs designed for high speed pulsed amplifier and driver applications. These MOSFETs offer Very Low rDS(ON) and Low Threshold Voltage. MARKING CO

5.14. cmldm7120t.pdf Size:479K _update_mosfet

CMLDM5757
CMLDM5757

CMLDM7120TG SURFACE MOUNT SILICON www.centralsemi.com N-CHANNEL DESCRIPTION: ENHANCEMENT-MODE The CENTRAL SEMICONDUCTOR CMLDM7120TG MOSFET is an enhancement-mode N-Channel MOSFET, manufactured by the N-Channel DMOS Process, designed for high speed pulsed amplifier and driver applications. This MOSFET offers low rDS(ON) and a MAX threshold voltage of 0.85V. MARKING CODE: CT7 F

5.15. cmldm8120t.pdf Size:456K _update_mosfet

CMLDM5757
CMLDM5757

CMLDM8120TG SURFACE MOUNT SILICON www.centralsemi.com P-CHANNEL DESCRIPTION: ENHANCEMENT-MODE The CENTRAL SEMICONDUCTOR CMLDM8120TG MOSFET is an enhancement-mode P-Channel MOSFET, manufactured by the P-Channel DMOS Process, designed for high speed pulsed amplifier and driver applications. This MOSFET offers low rDS(ON) and a MAX threshold voltage of 0.85V. MARKING CODE: CT8 S

5.16. cmldm7484.pdf Size:588K _central

CMLDM5757
CMLDM5757

CMLDM7484 SURFACE MOUNT www.centralsemi.com N-CHANNEL AND P-CHANNEL DESCRIPTION: ENHANCEMENT-MODE The CENTRAL SEMICONDUCTOR CMLDM7484 COMPLEMENTARY MOSFETS consists of complementary N-Channel and P-Channel Enhancement-mode silicon MOSFETs designed for high speed pulsed amplifier and driver applications. These MOSFETs offer Very Low rDS(ON) and Low Threshold Voltage. MARKING CODE:

5.17. cmldm8005.pdf Size:586K _central

CMLDM5757
CMLDM5757

CMLDM8005 SURFACE MOUNT www.centralsemi.com DUAL P-CHANNEL DESCRIPTION: ENHANCEMENT-MODE The CENTRAL SEMICONDUCTOR CMLDM8005 SILICON MOSFETS consists of Dual P-Channel Enhancement-mode silicon MOSFETs designed for high speed pulsed amplifier and driver applications. These MOSFETs offer Very Low rDS(ON) and Low Threshold Voltage. MARKING CODE: CC8 FEATURES: ESD Protection up to

5.18. cmldm7002a.pdf Size:623K _central

CMLDM5757
CMLDM5757

CMLDM7002A CMLDM7002AG* CMLDM7002AJ www.centralsemi.com SURFACE MOUNT DESCRIPTION: DUAL N-CHANNEL These CENTRAL SEMICONDUCTOR devices are ENHANCEMENT-MODE SILICON MOSFET dual Enhancement-mode N-Channel Field Effect Transistors, manufactured by the N-Channel DMOS Process, designed for high speed pulsed amplifier and driver applications. The CMLDM7002A utilizes the USA pinout confi

5.19. cmldm7003.pdf Size:518K _central

CMLDM5757
CMLDM5757

CMLDM7003 CMLDM7003G* CMLDM7003J www.centralsemi.com SURFACE MOUNT DESCRIPTION: DUAL N-CHANNEL These CENTRAL SEMICONDUCTOR devices ENHANCEMENT-MODE are dual Enhancement-mode N-Channel Field Effect SILICON MOSFET Transistors, manufactured by the N-Channel DMOS Process, designed for high speed pulsed amplifier and driver applications. The CMLDM7003 utilizes the USA pinout configur

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