CMLDM5757 - описание и поиск аналогов

 ..1. Size:585K  central
 cmldm5757.pdf 

CMLDM5757 SURFACE MOUNT www.centralsemi.com DUAL P-CHANNEL DESCRIPTION ENHANCEMENT-MODE The CENTRAL SEMICONDUCTOR CMLDM5757 SILICON MOSFETS consists of Dual P-Channel Enhancement-mode silicon MOSFETs designed for high speed pulsed amplifier and driver applications. These MOSFETs offer Very Low rDS(ON) and Low Threshold Voltage. MARKING CODE 77C FEATURES ESD Protection u

 9.1. Size:587K  central
 cmldm7585.pdf 

CMLDM7585 SURFACE MOUNT www.centralsemi.com N-CHANNEL AND P-CHANNEL DESCRIPTION ENHANCEMENT-MODE The CENTRAL SEMICONDUCTOR CMLDM7585 COMPLEMENTARY MOSFETS consists of complementary N-Channel and P-Channel Enhancement-mode silicon MOSFETs designed for high speed pulsed amplifier and driver applications. These MOSFETs offer Very Low rDS(ON) and Low Threshold Voltage. MARKING CO

 9.2. Size:665K  central
 cmldm7005.pdf 

CMLDM7005 CMLDM7005R www.centralsemi.com SURFACE MOUNT DUAL N-CHANNEL DESCRIPTION ENHANCEMENT-MODE These CENTRAL SEMICONDUCTOR devices are SILICON MOSFET dual N-Channel enhancement-mode silicon MOSFETs designed for high speed pulsed amplifier and driver applications. These MOSFETs offer very low rDS(ON) and low threshold voltage. The CMLDM7005R utilizes a reverse pinout confi

 9.3. Size:713K  central
 cmldm7003t.pdf 

CMLDM7003TG SURFACE MOUNT SILICON www.centralsemi.com DUAL N-CHANNEL DESCRIPTION ENHANCEMENT-MODE MOSFET The CENTRAL SEMICONDUCTOR CMLDM7003TG is a dual N-Channel enhancement-mode MOSFET, manufactured by the N-Channel DMOS Process, designed for high speed pulsed amplifier and driver applications. This device offers low rDS(ON), low VGS(th), and ESD protection up to 2kV. MARKIN

 9.4. Size:456K  central
 cmldm8120t.pdf 

CMLDM8120TG SURFACE MOUNT SILICON www.centralsemi.com P-CHANNEL DESCRIPTION ENHANCEMENT-MODE The CENTRAL SEMICONDUCTOR CMLDM8120TG MOSFET is an enhancement-mode P-Channel MOSFET, manufactured by the P-Channel DMOS Process, designed for high speed pulsed amplifier and driver applications. This MOSFET offers low rDS(ON) and a MAX threshold voltage of 0.85V. MARKING CODE CT8 S

 9.5. Size:623K  central
 cmldm7002a cmldm7002a cmldm7002aj.pdf 

CMLDM7002A CMLDM7002AG* CMLDM7002AJ www.centralsemi.com SURFACE MOUNT DESCRIPTION DUAL N-CHANNEL These CENTRAL SEMICONDUCTOR devices are ENHANCEMENT-MODE SILICON MOSFET dual Enhancement-mode N-Channel Field Effect Transistors, manufactured by the N-Channel DMOS Process, designed for high speed pulsed amplifier and driver applications. The CMLDM7002A utilizes the USA pinout co

 9.6. Size:521K  central
 cmldm7003e cmldm7003je.pdf 

CMLDM7003E CMLDM7003JE ENHANCED SPECIFICATION www.centralsemi.com SURFACE MOUNT DESCRIPTION DUAL N-CHANNEL The CENTRAL SEMICONDUCTOR CMLDM7003E ENHANCEMENT-MODE and CMLDM7003JE are Enhancement-mode SILICON MOSFET N-Channel Field Effect Transistors, manufactured by the N-Channel DMOS Process, designed for high speed pulsed amplifier and driver applications. The CMLDM7003E uti

 9.7. Size:586K  central
 cmldm8005.pdf 

CMLDM8005 SURFACE MOUNT www.centralsemi.com DUAL P-CHANNEL DESCRIPTION ENHANCEMENT-MODE The CENTRAL SEMICONDUCTOR CMLDM8005 SILICON MOSFETS consists of Dual P-Channel Enhancement-mode silicon MOSFETs designed for high speed pulsed amplifier and driver applications. These MOSFETs offer Very Low rDS(ON) and Low Threshold Voltage. MARKING CODE CC8 FEATURES ESD Protection u

 9.8. Size:534K  central
 cmldm7120 cmldm7120g.pdf 

CMLDM7120G SURFACE MOUNT www.centralsemi.com N-CHANNEL DESCRIPTION ENHANCEMENT-MODE The CENTRAL SEMICONDUCTOR CMLDM7120G SILICON MOSFET is an Enhancement-mode N-Channel Field Effect Transistor, manufactured by the N-Channel DMOS Process, designed for high speed pulsed amplifier and driver applications. This MOSFET offers Low rDS(ON) and Low Threshold Voltage. MARKING CODE C7

 9.9. Size:518K  central
 cmldm8002aj cmldm8002a cmldm8002ag.pdf 

CMLDM8002A CMLDM8002AG* CMLDM8002AJ www.centralsemi.com SURFACE MOUNT DESCRIPTION DUAL P-CHANNEL These CENTRAL SEMICONDUCTOR devices are ENHANCEMENT-MODE dual chip Enhancement-mode P-Channel Field Effect SILICON MOSFET Transistors, manufactured by the P-Channel DMOS Process, designed for high speed pulsed amplifier and driver applications. The CMLDM8002A utilizes the USA pin

 9.10. Size:518K  central
 cmldm7003 cmldm7003 cmldm7003j.pdf 

CMLDM7003 CMLDM7003G* CMLDM7003J www.centralsemi.com SURFACE MOUNT DESCRIPTION DUAL N-CHANNEL These CENTRAL SEMICONDUCTOR devices ENHANCEMENT-MODE are dual Enhancement-mode N-Channel Field Effect SILICON MOSFET Transistors, manufactured by the N-Channel DMOS Process, designed for high speed pulsed amplifier and driver applications. The CMLDM7003 utilizes the USA pinout confi

 9.11. Size:479K  central
 cmldm7120t.pdf 

CMLDM7120TG SURFACE MOUNT SILICON www.centralsemi.com N-CHANNEL DESCRIPTION ENHANCEMENT-MODE The CENTRAL SEMICONDUCTOR CMLDM7120TG MOSFET is an enhancement-mode N-Channel MOSFET, manufactured by the N-Channel DMOS Process, designed for high speed pulsed amplifier and driver applications. This MOSFET offers low rDS(ON) and a MAX threshold voltage of 0.85V. MARKING CODE CT7 F

 9.12. Size:587K  central
 cmldm7484.pdf 

CMLDM7484 SURFACE MOUNT www.centralsemi.com N-CHANNEL AND P-CHANNEL DESCRIPTION ENHANCEMENT-MODE The CENTRAL SEMICONDUCTOR CMLDM7484 COMPLEMENTARY MOSFETS consists of complementary N-Channel and P-Channel Enhancement-mode silicon MOSFETs designed for high speed pulsed amplifier and driver applications. These MOSFETs offer Very Low rDS(ON) and Low Threshold Voltage. MARKING CO

 9.13. Size:589K  central
 cmldm3757.pdf 

CMLDM3757 SURFACE MOUNT www.centralsemi.com N-CHANNEL AND P-CHANNEL DESCRIPTION ENHANCEMENT-MODE The CENTRAL SEMICONDUCTOR CMLDM3757 COMPLEMENTARY MOSFETS consists of complementary N-Channel and P-Channel Enhancement-mode silicon MOSFETs designed for high speed pulsed amplifier and driver applications. These MOSFETs offer Very Low rDS(ON) and Low Threshold Voltage. MARKING CO

 9.14. Size:511K  central
 cmldm8120.pdf 

CMLDM8120 CMLDM8120G* www.centralsemi.com SURFACE MOUNT P-CHANNEL DESCRIPTION ENHANCEMENT-MODE These CENTRAL SEMICONDUCTOR devices SILICON MOSFET are Enhancement-mode P-Channel Field Effect Transistors, manufactured by the P-Channel DMOS Process, designed for high speed pulsed amplifier and driver applications. This MOSFET offers Low rDS(on) and Low Theshold Voltage. MARKING

 9.15. Size:586K  central
 cmldm3737.pdf 

CMLDM3737 SURFACE MOUNT www.centralsemi.com DUAL N-CHANNEL DESCRIPTION ENHANCEMENT-MODE The CENTRAL SEMICONDUCTOR CMLDM3737 SILICON MOSFETS consists of Dual N-Channel Enhancement-mode silicon MOSFETs designed for high speed pulsed amplifier and driver applications. These MOSFETs offer Very Low rDS(ON) and Low Threshold Voltage. MARKING CODE 7C3 FEATURES ESD Protection u