CMLDM7002AJ MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: CMLDM7002AJ

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 0.35 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 60 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 40 V

|Id|ⓘ - Corriente continua de drenaje: 0.28 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Cossⓘ - Capacitancia de salida: 25 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 2 Ohm

Encapsulados: SOT-563

 Búsqueda de reemplazo de CMLDM7002AJ MOSFET

- Selecciónⓘ de transistores por parámetros

 

CMLDM7002AJ datasheet

 ..1. Size:623K  central
 cmldm7002a cmldm7002a cmldm7002aj.pdf pdf_icon

CMLDM7002AJ

CMLDM7002A CMLDM7002AG* CMLDM7002AJ www.centralsemi.com SURFACE MOUNT DESCRIPTION DUAL N-CHANNEL These CENTRAL SEMICONDUCTOR devices are ENHANCEMENT-MODE SILICON MOSFET dual Enhancement-mode N-Channel Field Effect Transistors, manufactured by the N-Channel DMOS Process, designed for high speed pulsed amplifier and driver applications. The CMLDM7002A utilizes the USA pinout co

 6.1. Size:665K  central
 cmldm7005.pdf pdf_icon

CMLDM7002AJ

CMLDM7005 CMLDM7005R www.centralsemi.com SURFACE MOUNT DUAL N-CHANNEL DESCRIPTION ENHANCEMENT-MODE These CENTRAL SEMICONDUCTOR devices are SILICON MOSFET dual N-Channel enhancement-mode silicon MOSFETs designed for high speed pulsed amplifier and driver applications. These MOSFETs offer very low rDS(ON) and low threshold voltage. The CMLDM7005R utilizes a reverse pinout confi

 6.2. Size:713K  central
 cmldm7003t.pdf pdf_icon

CMLDM7002AJ

CMLDM7003TG SURFACE MOUNT SILICON www.centralsemi.com DUAL N-CHANNEL DESCRIPTION ENHANCEMENT-MODE MOSFET The CENTRAL SEMICONDUCTOR CMLDM7003TG is a dual N-Channel enhancement-mode MOSFET, manufactured by the N-Channel DMOS Process, designed for high speed pulsed amplifier and driver applications. This device offers low rDS(ON), low VGS(th), and ESD protection up to 2kV. MARKIN

 6.3. Size:521K  central
 cmldm7003e cmldm7003je.pdf pdf_icon

CMLDM7002AJ

CMLDM7003E CMLDM7003JE ENHANCED SPECIFICATION www.centralsemi.com SURFACE MOUNT DESCRIPTION DUAL N-CHANNEL The CENTRAL SEMICONDUCTOR CMLDM7003E ENHANCEMENT-MODE and CMLDM7003JE are Enhancement-mode SILICON MOSFET N-Channel Field Effect Transistors, manufactured by the N-Channel DMOS Process, designed for high speed pulsed amplifier and driver applications. The CMLDM7003E uti

MOSTRAR MÁS

Otros transistores... CM860, CMF10120D, CMF20120D, CMKDM8005, CMLDM3737, CMLDM3757, CMLDM5757, CMLDM7002A, 5N60, CMLDM7003, CMLDM7003E, CMLDM7003J, CMLDM7003JE, CMLDM7003TG, CMLDM7005, CMLDM7120G, CMLDM7120T