CMLDM8002AG Todos los transistores

 

CMLDM8002AG MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: CMLDM8002AG
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 0.35 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 50 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 0.28 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Cossⓘ - Capacitancia de salida: 15 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 2.5 Ohm
   Paquete / Cubierta: SOT-563
 

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CMLDM8002AG datasheet

 ..1. Size:518K  central
 cmldm8002aj cmldm8002a cmldm8002ag.pdf pdf_icon

CMLDM8002AG

CMLDM8002A CMLDM8002AG* CMLDM8002AJ www.centralsemi.com SURFACE MOUNT DESCRIPTION DUAL P-CHANNEL These CENTRAL SEMICONDUCTOR devices are ENHANCEMENT-MODE dual chip Enhancement-mode P-Channel Field Effect SILICON MOSFET Transistors, manufactured by the P-Channel DMOS Process, designed for high speed pulsed amplifier and driver applications. The CMLDM8002A utilizes the USA pin

 6.1. Size:586K  central
 cmldm8005.pdf pdf_icon

CMLDM8002AG

CMLDM8005 SURFACE MOUNT www.centralsemi.com DUAL P-CHANNEL DESCRIPTION ENHANCEMENT-MODE The CENTRAL SEMICONDUCTOR CMLDM8005 SILICON MOSFETS consists of Dual P-Channel Enhancement-mode silicon MOSFETs designed for high speed pulsed amplifier and driver applications. These MOSFETs offer Very Low rDS(ON) and Low Threshold Voltage. MARKING CODE CC8 FEATURES ESD Protection u

 8.1. Size:456K  central
 cmldm8120t.pdf pdf_icon

CMLDM8002AG

CMLDM8120TG SURFACE MOUNT SILICON www.centralsemi.com P-CHANNEL DESCRIPTION ENHANCEMENT-MODE The CENTRAL SEMICONDUCTOR CMLDM8120TG MOSFET is an enhancement-mode P-Channel MOSFET, manufactured by the P-Channel DMOS Process, designed for high speed pulsed amplifier and driver applications. This MOSFET offers low rDS(ON) and a MAX threshold voltage of 0.85V. MARKING CODE CT8 S

 8.2. Size:511K  central
 cmldm8120.pdf pdf_icon

CMLDM8002AG

CMLDM8120 CMLDM8120G* www.centralsemi.com SURFACE MOUNT P-CHANNEL DESCRIPTION ENHANCEMENT-MODE These CENTRAL SEMICONDUCTOR devices SILICON MOSFET are Enhancement-mode P-Channel Field Effect Transistors, manufactured by the P-Channel DMOS Process, designed for high speed pulsed amplifier and driver applications. This MOSFET offers Low rDS(on) and Low Theshold Voltage. MARKING

MOSTRAR MÁS

Otros transistores... CMLDM7003JE , CMLDM7003TG , CMLDM7005 , CMLDM7120G , CMLDM7120T , CMLDM7484 , CMLDM7585 , CMLDM8002A , P60NF06 , CMLDM8002AJ , CMLDM8005 , CMLDM8120 , CMLDM8120T , CMLM0205 , CMLM0305 , CMLM0305T , CMLM0574 .

History: IRLI640GPBF | AGM20P22AS | AGM30P25D

 

 
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