CMLDM8002AG MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: CMLDM8002AG
Tipo de FET: MOSFET
Polaridad de transistor: P
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 0.35 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 50 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 0.28 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Cossⓘ - Capacitancia de salida: 15 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 2.5 Ohm
Encapsulados: SOT-563
Búsqueda de reemplazo de CMLDM8002AG MOSFET
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CMLDM8002AG datasheet
cmldm8002aj cmldm8002a cmldm8002ag.pdf
CMLDM8002A CMLDM8002AG* CMLDM8002AJ www.centralsemi.com SURFACE MOUNT DESCRIPTION DUAL P-CHANNEL These CENTRAL SEMICONDUCTOR devices are ENHANCEMENT-MODE dual chip Enhancement-mode P-Channel Field Effect SILICON MOSFET Transistors, manufactured by the P-Channel DMOS Process, designed for high speed pulsed amplifier and driver applications. The CMLDM8002A utilizes the USA pin
cmldm8005.pdf
CMLDM8005 SURFACE MOUNT www.centralsemi.com DUAL P-CHANNEL DESCRIPTION ENHANCEMENT-MODE The CENTRAL SEMICONDUCTOR CMLDM8005 SILICON MOSFETS consists of Dual P-Channel Enhancement-mode silicon MOSFETs designed for high speed pulsed amplifier and driver applications. These MOSFETs offer Very Low rDS(ON) and Low Threshold Voltage. MARKING CODE CC8 FEATURES ESD Protection u
cmldm8120t.pdf
CMLDM8120TG SURFACE MOUNT SILICON www.centralsemi.com P-CHANNEL DESCRIPTION ENHANCEMENT-MODE The CENTRAL SEMICONDUCTOR CMLDM8120TG MOSFET is an enhancement-mode P-Channel MOSFET, manufactured by the P-Channel DMOS Process, designed for high speed pulsed amplifier and driver applications. This MOSFET offers low rDS(ON) and a MAX threshold voltage of 0.85V. MARKING CODE CT8 S
cmldm8120.pdf
CMLDM8120 CMLDM8120G* www.centralsemi.com SURFACE MOUNT P-CHANNEL DESCRIPTION ENHANCEMENT-MODE These CENTRAL SEMICONDUCTOR devices SILICON MOSFET are Enhancement-mode P-Channel Field Effect Transistors, manufactured by the P-Channel DMOS Process, designed for high speed pulsed amplifier and driver applications. This MOSFET offers Low rDS(on) and Low Theshold Voltage. MARKING
Otros transistores... CMLDM7003JE , CMLDM7003TG , CMLDM7005 , CMLDM7120G , CMLDM7120T , CMLDM7484 , CMLDM7585 , CMLDM8002A , P60NF06 , CMLDM8002AJ , CMLDM8005 , CMLDM8120 , CMLDM8120T , CMLM0205 , CMLM0305 , CMLM0305T , CMLM0574 .
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