All MOSFET. CMLDM8002AG Datasheet

 

CMLDM8002AG MOSFET. Datasheet pdf. Equivalent


   Type Designator: CMLDM8002AG
   Marking Code: CG8
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 0.35 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 50 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
   |Id|ⓘ - Maximum Drain Current: 0.28 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Cossⓘ - Output Capacitance: 15 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 2.5 Ohm
   Package: SOT-563

 CMLDM8002AG Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

CMLDM8002AG Datasheet (PDF)

 ..1. Size:518K  central
 cmldm8002aj cmldm8002a cmldm8002ag.pdf

CMLDM8002AG CMLDM8002AG

CMLDM8002ACMLDM8002AG*CMLDM8002AJwww.centralsemi.comSURFACE MOUNTDESCRIPTION:DUAL P-CHANNELThese CENTRAL SEMICONDUCTOR devices are ENHANCEMENT-MODEdual chip Enhancement-mode P-Channel Field Effect SILICON MOSFETTransistors, manufactured by the P-Channel DMOS Process, designed for high speed pulsed amplifier and driver applications. The CMLDM8002A utilizes the USA pin

 6.1. Size:586K  central
 cmldm8005.pdf

CMLDM8002AG CMLDM8002AG

CMLDM8005SURFACE MOUNTwww.centralsemi.comDUAL P-CHANNELDESCRIPTION:ENHANCEMENT-MODEThe CENTRAL SEMICONDUCTOR CMLDM8005 SILICON MOSFETSconsists of Dual P-Channel Enhancement-mode silicon MOSFETs designed for high speed pulsed amplifier and driver applications. These MOSFETs offer Very Low rDS(ON) and Low Threshold Voltage.MARKING CODE: CC8FEATURES: ESD Protection u

 8.1. Size:456K  central
 cmldm8120t.pdf

CMLDM8002AG CMLDM8002AG

CMLDM8120TGSURFACE MOUNT SILICONwww.centralsemi.comP-CHANNELDESCRIPTION:ENHANCEMENT-MODEThe CENTRAL SEMICONDUCTOR CMLDM8120TG MOSFETis an enhancement-mode P-Channel MOSFET, manufactured by the P-Channel DMOS Process, designed for high speed pulsed amplifier and driver applications. This MOSFET offers low rDS(ON) and a MAX threshold voltage of 0.85V.MARKING CODE: CT8S

 8.2. Size:511K  central
 cmldm8120.pdf

CMLDM8002AG CMLDM8002AG

CMLDM8120CMLDM8120G*www.centralsemi.comSURFACE MOUNTP-CHANNELDESCRIPTION:ENHANCEMENT-MODEThese CENTRAL SEMICONDUCTOR devices SILICON MOSFETare Enhancement-mode P-Channel Field Effect Transistors, manufactured by the P-Channel DMOS Process, designed for high speed pulsed amplifier and driver applications. This MOSFET offers Low rDS(on) and Low Theshold Voltage.MARKING

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , STP80NF70 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

History: CMU5941 | AP10P500N | 2SK4143-S17-AY | 2SK549 | CMUDM7004

 

 
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