CMLDM8002AJ MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: CMLDM8002AJ

Tipo de FET: MOSFET

Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 0.35 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 50 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 0.28 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Cossⓘ - Capacitancia de salida: 15 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 2.5 Ohm

Encapsulados: SOT-563

 Búsqueda de reemplazo de CMLDM8002AJ MOSFET

- Selecciónⓘ de transistores por parámetros

 

CMLDM8002AJ datasheet

 ..1. Size:518K  central
 cmldm8002aj cmldm8002a cmldm8002ag.pdf pdf_icon

CMLDM8002AJ

CMLDM8002A CMLDM8002AG* CMLDM8002AJ www.centralsemi.com SURFACE MOUNT DESCRIPTION DUAL P-CHANNEL These CENTRAL SEMICONDUCTOR devices are ENHANCEMENT-MODE dual chip Enhancement-mode P-Channel Field Effect SILICON MOSFET Transistors, manufactured by the P-Channel DMOS Process, designed for high speed pulsed amplifier and driver applications. The CMLDM8002A utilizes the USA pin

 6.1. Size:586K  central
 cmldm8005.pdf pdf_icon

CMLDM8002AJ

CMLDM8005 SURFACE MOUNT www.centralsemi.com DUAL P-CHANNEL DESCRIPTION ENHANCEMENT-MODE The CENTRAL SEMICONDUCTOR CMLDM8005 SILICON MOSFETS consists of Dual P-Channel Enhancement-mode silicon MOSFETs designed for high speed pulsed amplifier and driver applications. These MOSFETs offer Very Low rDS(ON) and Low Threshold Voltage. MARKING CODE CC8 FEATURES ESD Protection u

 8.1. Size:456K  central
 cmldm8120t.pdf pdf_icon

CMLDM8002AJ

CMLDM8120TG SURFACE MOUNT SILICON www.centralsemi.com P-CHANNEL DESCRIPTION ENHANCEMENT-MODE The CENTRAL SEMICONDUCTOR CMLDM8120TG MOSFET is an enhancement-mode P-Channel MOSFET, manufactured by the P-Channel DMOS Process, designed for high speed pulsed amplifier and driver applications. This MOSFET offers low rDS(ON) and a MAX threshold voltage of 0.85V. MARKING CODE CT8 S

 8.2. Size:511K  central
 cmldm8120.pdf pdf_icon

CMLDM8002AJ

CMLDM8120 CMLDM8120G* www.centralsemi.com SURFACE MOUNT P-CHANNEL DESCRIPTION ENHANCEMENT-MODE These CENTRAL SEMICONDUCTOR devices SILICON MOSFET are Enhancement-mode P-Channel Field Effect Transistors, manufactured by the P-Channel DMOS Process, designed for high speed pulsed amplifier and driver applications. This MOSFET offers Low rDS(on) and Low Theshold Voltage. MARKING

MOSTRAR MÁS

Otros transistores... CMLDM7003TG, CMLDM7005, CMLDM7120G, CMLDM7120T, CMLDM7484, CMLDM7585, CMLDM8002A, CMLDM8002AG, 75N75, CMLDM8005, CMLDM8120, CMLDM8120T, CMLM0205, CMLM0305, CMLM0305T, CMLM0574, CMLM0575