Справочник MOSFET. CMLDM8002AJ

 

CMLDM8002AJ Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: CMLDM8002AJ
   Тип транзистора: MOSFET
   Полярность: P
   Pd ⓘ - Максимальная рассеиваемая мощность: 0.35 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 50 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id| ⓘ - Максимально допустимый постоянный ток стока: 0.28 A
   Tj ⓘ - Максимальная температура канала: 150 °C
   Cossⓘ - Выходная емкость: 15 pf
   Rds ⓘ - Сопротивление сток-исток открытого транзистора: 2.5 Ohm
   Тип корпуса: SOT-563
 

 Аналог (замена) для CMLDM8002AJ

   - подбор ⓘ MOSFET транзистора по параметрам

 

CMLDM8002AJ Datasheet (PDF)

 ..1. Size:518K  central
cmldm8002aj cmldm8002a cmldm8002ag.pdfpdf_icon

CMLDM8002AJ

CMLDM8002ACMLDM8002AG*CMLDM8002AJwww.centralsemi.comSURFACE MOUNTDESCRIPTION:DUAL P-CHANNELThese CENTRAL SEMICONDUCTOR devices are ENHANCEMENT-MODEdual chip Enhancement-mode P-Channel Field Effect SILICON MOSFETTransistors, manufactured by the P-Channel DMOS Process, designed for high speed pulsed amplifier and driver applications. The CMLDM8002A utilizes the USA pin

 6.1. Size:586K  central
cmldm8005.pdfpdf_icon

CMLDM8002AJ

CMLDM8005SURFACE MOUNTwww.centralsemi.comDUAL P-CHANNELDESCRIPTION:ENHANCEMENT-MODEThe CENTRAL SEMICONDUCTOR CMLDM8005 SILICON MOSFETSconsists of Dual P-Channel Enhancement-mode silicon MOSFETs designed for high speed pulsed amplifier and driver applications. These MOSFETs offer Very Low rDS(ON) and Low Threshold Voltage.MARKING CODE: CC8FEATURES: ESD Protection u

 8.1. Size:456K  central
cmldm8120t.pdfpdf_icon

CMLDM8002AJ

CMLDM8120TGSURFACE MOUNT SILICONwww.centralsemi.comP-CHANNELDESCRIPTION:ENHANCEMENT-MODEThe CENTRAL SEMICONDUCTOR CMLDM8120TG MOSFETis an enhancement-mode P-Channel MOSFET, manufactured by the P-Channel DMOS Process, designed for high speed pulsed amplifier and driver applications. This MOSFET offers low rDS(ON) and a MAX threshold voltage of 0.85V.MARKING CODE: CT8S

 8.2. Size:511K  central
cmldm8120.pdfpdf_icon

CMLDM8002AJ

CMLDM8120CMLDM8120G*www.centralsemi.comSURFACE MOUNTP-CHANNELDESCRIPTION:ENHANCEMENT-MODEThese CENTRAL SEMICONDUCTOR devices SILICON MOSFETare Enhancement-mode P-Channel Field Effect Transistors, manufactured by the P-Channel DMOS Process, designed for high speed pulsed amplifier and driver applications. This MOSFET offers Low rDS(on) and Low Theshold Voltage.MARKING

Другие MOSFET... CMLDM7003TG , CMLDM7005 , CMLDM7120G , CMLDM7120T , CMLDM7484 , CMLDM7585 , CMLDM8002A , CMLDM8002AG , IRF520 , CMLDM8005 , CMLDM8120 , CMLDM8120T , CMLM0205 , CMLM0305 , CMLM0305T , CMLM0574 , CMLM0575 .

History: TK31J60W5 | 2N3956 | AP4513GD | SLB80R850SJ | LNH06R062 | APT8052BLL | NVMFS6H858NL

 

 
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