CMLDM8120T Todos los transistores

 

CMLDM8120T MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: CMLDM8120T
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 0.35 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 20 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 8 V
   |Id|ⓘ - Corriente continua de drenaje: 0.86 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Cossⓘ - Capacitancia de salida: 60 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.142 Ohm
   Paquete / Cubierta: SOT-563
 

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CMLDM8120T Datasheet (PDF)

 ..1. Size:456K  central
 cmldm8120t.pdf pdf_icon

CMLDM8120T

CMLDM8120TGSURFACE MOUNT SILICONwww.centralsemi.comP-CHANNELDESCRIPTION:ENHANCEMENT-MODEThe CENTRAL SEMICONDUCTOR CMLDM8120TG MOSFETis an enhancement-mode P-Channel MOSFET, manufactured by the P-Channel DMOS Process, designed for high speed pulsed amplifier and driver applications. This MOSFET offers low rDS(ON) and a MAX threshold voltage of 0.85V.MARKING CODE: CT8S

 5.1. Size:511K  central
 cmldm8120.pdf pdf_icon

CMLDM8120T

CMLDM8120CMLDM8120G*www.centralsemi.comSURFACE MOUNTP-CHANNELDESCRIPTION:ENHANCEMENT-MODEThese CENTRAL SEMICONDUCTOR devices SILICON MOSFETare Enhancement-mode P-Channel Field Effect Transistors, manufactured by the P-Channel DMOS Process, designed for high speed pulsed amplifier and driver applications. This MOSFET offers Low rDS(on) and Low Theshold Voltage.MARKING

 8.1. Size:586K  central
 cmldm8005.pdf pdf_icon

CMLDM8120T

CMLDM8005SURFACE MOUNTwww.centralsemi.comDUAL P-CHANNELDESCRIPTION:ENHANCEMENT-MODEThe CENTRAL SEMICONDUCTOR CMLDM8005 SILICON MOSFETSconsists of Dual P-Channel Enhancement-mode silicon MOSFETs designed for high speed pulsed amplifier and driver applications. These MOSFETs offer Very Low rDS(ON) and Low Threshold Voltage.MARKING CODE: CC8FEATURES: ESD Protection u

 8.2. Size:518K  central
 cmldm8002aj cmldm8002a cmldm8002ag.pdf pdf_icon

CMLDM8120T

CMLDM8002ACMLDM8002AG*CMLDM8002AJwww.centralsemi.comSURFACE MOUNTDESCRIPTION:DUAL P-CHANNELThese CENTRAL SEMICONDUCTOR devices are ENHANCEMENT-MODEdual chip Enhancement-mode P-Channel Field Effect SILICON MOSFETTransistors, manufactured by the P-Channel DMOS Process, designed for high speed pulsed amplifier and driver applications. The CMLDM8002A utilizes the USA pin

MOSTRAR MÁS

Otros transistores... CMLDM7120T , CMLDM7484 , CMLDM7585 , CMLDM8002A , CMLDM8002AG , CMLDM8002AJ , CMLDM8005 , CMLDM8120 , IRFZ48N , CMLM0205 , CMLM0305 , CMLM0305T , CMLM0574 , CMLM0575 , CMLM0584 , CMLM0585 , CMLM0708A .

 

 
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