CMLDM8120T. Аналоги и основные параметры

Наименование производителя: CMLDM8120T

Тип транзистора: MOSFET

Полярность: P

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 0.35 W

|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 20 V

|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 8 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 0.86 A

Tj ⓘ - Максимальная температура канала: 150 °C

Электрические характеристики

Cossⓘ - Выходная емкость: 60 pf

RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.142 Ohm

Тип корпуса: SOT-563

Аналог (замена) для CMLDM8120T

- подборⓘ MOSFET транзистора по параметрам

 

CMLDM8120T даташит

 ..1. Size:456K  central
 cmldm8120t.pdf pdf_icon

CMLDM8120T

CMLDM8120TG SURFACE MOUNT SILICON www.centralsemi.com P-CHANNEL DESCRIPTION ENHANCEMENT-MODE The CENTRAL SEMICONDUCTOR CMLDM8120TG MOSFET is an enhancement-mode P-Channel MOSFET, manufactured by the P-Channel DMOS Process, designed for high speed pulsed amplifier and driver applications. This MOSFET offers low rDS(ON) and a MAX threshold voltage of 0.85V. MARKING CODE CT8 S

 5.1. Size:511K  central
 cmldm8120.pdf pdf_icon

CMLDM8120T

CMLDM8120 CMLDM8120G* www.centralsemi.com SURFACE MOUNT P-CHANNEL DESCRIPTION ENHANCEMENT-MODE These CENTRAL SEMICONDUCTOR devices SILICON MOSFET are Enhancement-mode P-Channel Field Effect Transistors, manufactured by the P-Channel DMOS Process, designed for high speed pulsed amplifier and driver applications. This MOSFET offers Low rDS(on) and Low Theshold Voltage. MARKING

 8.1. Size:586K  central
 cmldm8005.pdf pdf_icon

CMLDM8120T

CMLDM8005 SURFACE MOUNT www.centralsemi.com DUAL P-CHANNEL DESCRIPTION ENHANCEMENT-MODE The CENTRAL SEMICONDUCTOR CMLDM8005 SILICON MOSFETS consists of Dual P-Channel Enhancement-mode silicon MOSFETs designed for high speed pulsed amplifier and driver applications. These MOSFETs offer Very Low rDS(ON) and Low Threshold Voltage. MARKING CODE CC8 FEATURES ESD Protection u

 8.2. Size:518K  central
 cmldm8002aj cmldm8002a cmldm8002ag.pdf pdf_icon

CMLDM8120T

CMLDM8002A CMLDM8002AG* CMLDM8002AJ www.centralsemi.com SURFACE MOUNT DESCRIPTION DUAL P-CHANNEL These CENTRAL SEMICONDUCTOR devices are ENHANCEMENT-MODE dual chip Enhancement-mode P-Channel Field Effect SILICON MOSFET Transistors, manufactured by the P-Channel DMOS Process, designed for high speed pulsed amplifier and driver applications. The CMLDM8002A utilizes the USA pin

ПОКАЗАТЬ ЕЩЁ

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