CMPDM302PH Todos los transistores

 

CMPDM302PH MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: CMPDM302PH
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 0.35 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 12 V
   |Id|ⓘ - Corriente continua de drenaje: 2.4 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Cossⓘ - Capacitancia de salida: 82 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.091 Ohm
   Paquete / Cubierta: SOT23
 

 Búsqueda de reemplazo de CMPDM302PH MOSFET

   - Selección ⓘ de transistores por parámetros

 

CMPDM302PH Datasheet (PDF)

 ..1. Size:343K  central
cmpdm302ph.pdf pdf_icon

CMPDM302PH

CMPDM302PHSURFACE MOUNTwww.centralsemi.comP-CHANNELDESCRIPTION:ENHANCEMENT-MODEThe CENTRAL SEMICONDUCTOR CMPDM302PH SILICON MOSFETis a High Current P-Channel Enhancement-mode Silicon MOSFET, manufactured by the P-Channel DMOS Process, and is designed for high speed pulsed amplifier and driver applications. This MOSFET offers High Current, Low rDS(ON), Low Threshold Volta

 7.1. Size:348K  central
cmpdm303nh.pdf pdf_icon

CMPDM302PH

CMPDM303NHSURFACE MOUNTwww.centralsemi.comN-CHANNELDESCRIPTION:ENHANCEMENT-MODEThe CENTRAL SEMICONDUCTOR CMPDM303NH SILICON MOSFETis a high current N-Channel enhancement-mode silicon MOSFET, manufactured by the N-Channel DMOS process, and is designed for high speed pulsed amplifier and driver applications. This MOSFET offers high current, low rDS(ON), low threshold volta

 9.1. Size:324K  central
cmpdm8002a.pdf pdf_icon

CMPDM302PH

CMPDM8002ASURFACE MOUNTwww.centralsemi.comP-CHANNELDESCRIPTION:ENHANCEMENT-MODEThe CENTRAL SEMICONDUCTOR CMPDM8002A SILICON MOSFETis an Enhancement-mode P-Channel Field Effect Transistor, manufactured by the P-Channel DMOS Process, designed for high speed pulsed amplifier and driver applications. MARKING CODE: C802AFEATURES:SOT-23 CASE Low rDS(ON) Low VDS(O

 9.2. Size:343K  central
cmpdm202ph.pdf pdf_icon

CMPDM302PH

CMPDM202PHSURFACE MOUNTwww.centralsemi.comP-CHANNELDESCRIPTION:ENHANCEMENT-MODEThe CENTRAL SEMICONDUCTOR CMPDM202PH SILICON MOSFETis a High Current P-Channel Enhancement-mode Silicon MOSFET, manufactured by the P-Channel DMOS Process, and is designed for high speed pulsed amplifier and driver applications. This MOSFET offers High Current, Low rDS(ON), Low Threshold Volta

Otros transistores... CMLM0584 , CMLM0585 , CMLM0708A , CMLM8205 , CMNDM7001 , CMNDM8001 , CMPDM202PH , CMPDM203NH , HY1906P , CMPDM303NH , CMPDM7002A , CMPDM7002AE , CMPDM7002AG , CMPDM7002AHC , CMPDM7003 , CMPDM7120G , CMPDM8002A .

History: LSB55R050GT | HM10P10D | FDU6688 | UPA1950

 

 
Back to Top

 


 
.