CMPDM302PH. Аналоги и основные параметры
Наименование производителя: CMPDM302PH
Тип транзистора: MOSFET
Полярность: P
Предельные значения
Pd ⓘ - Максимальная рассеиваемая мощность: 0.35 W
|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 30 V
|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 12 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 2.4 A
Tj ⓘ - Максимальная температура канала: 150 °C
Электрические характеристики
Cossⓘ - Выходная емкость: 82 pf
RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.091 Ohm
Тип корпуса: SOT23
Аналог (замена) для CMPDM302PH
- подборⓘ MOSFET транзистора по параметрам
CMPDM302PH даташит
cmpdm302ph.pdf
CMPDM302PH SURFACE MOUNT www.centralsemi.com P-CHANNEL DESCRIPTION ENHANCEMENT-MODE The CENTRAL SEMICONDUCTOR CMPDM302PH SILICON MOSFET is a High Current P-Channel Enhancement-mode Silicon MOSFET, manufactured by the P-Channel DMOS Process, and is designed for high speed pulsed amplifier and driver applications. This MOSFET offers High Current, Low rDS(ON), Low Threshold Volta
cmpdm303nh.pdf
CMPDM303NH SURFACE MOUNT www.centralsemi.com N-CHANNEL DESCRIPTION ENHANCEMENT-MODE The CENTRAL SEMICONDUCTOR CMPDM303NH SILICON MOSFET is a high current N-Channel enhancement-mode silicon MOSFET, manufactured by the N-Channel DMOS process, and is designed for high speed pulsed amplifier and driver applications. This MOSFET offers high current, low rDS(ON), low threshold volta
cmpdm8002a.pdf
CMPDM8002A SURFACE MOUNT www.centralsemi.com P-CHANNEL DESCRIPTION ENHANCEMENT-MODE The CENTRAL SEMICONDUCTOR CMPDM8002A SILICON MOSFET is an Enhancement-mode P-Channel Field Effect Transistor, manufactured by the P-Channel DMOS Process, designed for high speed pulsed amplifier and driver applications. MARKING CODE C802A FEATURES SOT-23 CASE Low rDS(ON) Low VDS(O
cmpdm202ph.pdf
CMPDM202PH SURFACE MOUNT www.centralsemi.com P-CHANNEL DESCRIPTION ENHANCEMENT-MODE The CENTRAL SEMICONDUCTOR CMPDM202PH SILICON MOSFET is a High Current P-Channel Enhancement-mode Silicon MOSFET, manufactured by the P-Channel DMOS Process, and is designed for high speed pulsed amplifier and driver applications. This MOSFET offers High Current, Low rDS(ON), Low Threshold Volta
Другие IGBT... CMLM0584, CMLM0585, CMLM0708A, CMLM8205, CMNDM7001, CMNDM8001, CMPDM202PH, CMPDM203NH, AOD4184A, CMPDM303NH, CMPDM7002A, CMPDM7002AE, CMPDM7002AG, CMPDM7002AHC, CMPDM7003, CMPDM7120G, CMPDM8002A
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Список транзисторов
Обновления
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