2SK1109 Todos los transistores

 

2SK1109 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 2SK1109

Código: J32_J33_J34_J35_J36_J37

Tipo de FET: JFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 0.08 W

Tensión drenaje-fuente (Vds): 20 V

Corriente continua de drenaje (Id): 0.01 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Resistencia drenaje-fuente RDS(on): 800 Ohm

Empaquetado / Estuche: SC59

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2SK1109 Datasheet (PDF)

1.1. 2sk1109.pdf Size:44K _nec

2SK1109
2SK1109

DATA SHEET JUNCTION FIELD EFFECT TRANSISTOR 2SK1109 N-CHANNEL SILICON JUNCTION FIELD EFFECT TRANSISTOR FOR IMPEDANCE CONVERTER OF ECM DESCRIPTION PACKAGE DRAWING (Unit: mm) The 2SK1109 is suitable for converter of ECM. 0.8 FEATURES Compact package 1. Source High forward transfer admittance 2. Drain 3. Gate 1000 S TYP. (IDSS = 100 A) 1 2 1600 S TYP. (IDSS = 200 A) Inclu

1.2. 2sk1109.pdf Size:10K _utc

2SK1109
2SK1109

UTC K1109 JUNCTION FIELD EFFECT TRANSISTOR N-CHANNEL JFET FOR ELECTRET CONDENSER MICROPHONE 1 2 DESCRIPTION The UTC K1109 is N-channel JFET for electret condenser microphone. 3 FEATURES *High gm implies low transfer loss *Built-in gate-source diode and resistor implies fast TOP VIEW power on settling time SOT-23 1:SOURCE 2:DRAIN 3:GATE ABSOLUTE MAXIMUM RATINGS ( Operating temper

 1.3. 2sk1109.pdf Size:977K _kexin

2SK1109
2SK1109

SMD Type MOSFET N-Channel Junction Field Effect Transistors 2SK1109 SOT-23 Unit: mm +0.1 2.9 -0.1 +0.1 0.4 -0.1 3 ■ Features ● VDS (V) = 20V ● ID = 10m A 1 2 ● High forward transfer admittance +0.1 +0.05 0.95 -0.1 0.1 -0.01 +0.1 1.9-0.1 1000 μs TYP. (IDSS = 100 μA) 1600 μs TYP. (IDSS = 200 μA) ● Includes diode and high resistance at G - S 1. Drain 2. So

Otros transistores... 2SK1006-01MR , 2SK1007-01 , 2SK1013-01 , 2SK1017 , 2SK1019 , 2SK105 , 2SK1059 , 2SK1060 , IRF3710 , 2SK1122 , 2SK1123 , 2SK1132 , 2SK1133 , 2SK1177 , 2SK1178 , 2SK1179 , 2SK1180 .

 

 
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