2SK1109 Datasheet and Replacement

DATA SHEETJUNCTION FIELD EFFECT TRANSISTOR2SK1109N-CHANNEL SILICON JUNCTION FIELD EFFECT TRANSISTORFOR IMPEDANCE CONVERTER OF ECMDESCRIPTIONPACKAGE DRAWING (Unit: mm) The 2SK1109 is suitable for converter of ECM.0.8FEATURES Compact package1. Source High forward transfer admittance2. Drain3. Gate1000 S TYP. (IDSS = 100 A)1 21600 S TYP. (IDSS = 200

UTC K1109 JUNCTION FIELD EFFECT TRANSISTORN-CHANNEL JFET FORELECTRET CONDENSERMICROPHONE1 2DESCRIPTION The UTC K1109 is N-channel JFET for electretcondenser microphone.3FEATURES*High gm implies low transfer loss*Built-in gate-source diode and resistor implies fastTOP VIEW power on settling timeSOT-23 1:SOURCE 2:DRAIN 3:GATEABSOLUTE MAXIMUM RATINGS ( Operating tem

SMD Type MOSFETN-Channel Junction Field Effect Transistors2SK1109SOT-23Unit: mm+0.12.9 -0.1+0.10.4 -0.13 Features VDS (V) = 20V ID = 10m A1 2 High forward transfer admittance+0.1+0.050.95 -0.1 0.1 -0.01+0.11.9-0.11000 s TYP. (IDSS = 100 A)1600 s TYP. (IDSS = 200 A) Includes diode and high resistance at G - S1. Drain2. So

DATA SHEETJUNCTION FIELD EFFECT TRANSISTOR2SK1108N-CHANNEL SILICON JUNCTION FIELD EFFECT TRANSISTORFOR IMPEDANCE CONVERTER OF ECMDESCRIPTION The 2SK1108 is suitable for converter of ECM.FEATURES Compact package High forward transfer admittance1000 S TYP. (IDSS = 100 A)1600 S TYP. (IDSS = 200 A) Includes diode and high resistance at G - SORDERING INFORM

Silicon Junction FETs (Small Signal) 2SK11032SK1103Silicon N-Channel JunctionUnit : mmFor switching+0.22.8 0.3Complementary with 2SJ163 +0.250.65 0.15 1.5 0.05 0.65 0.15 Features1Low ON-resistanceLow-noise characteristics32 Absolute Maximum Ratings (Ta = 25C)Parameter Symbol Rating Unit0.1 to 0.3Gate-Drain voltage VGDS 65 V0.4 0.2Drain c

Silicon Junction FETs (Small Signal) 2SK11042SK1104Silicon N-Channel JunctionUnit : mmFor switching4.0 0.2Complementary with 2SJ164 FeaturesLow ON-resistanceLow-noise characteristicsmarking1 2 3 Absolute Maximum Ratings (Ta = 25C)Parameter Symbol Rating Unit1.27 1.271 : SourceGate-Drain voltage VGDS 65 V 2.54 0.152 : GateDrain current ID 20 mA3

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isc N-Channel MOSFET Transistor 2SK1105DESCRIPTIONDrain Current I =3A@ T =25D CDrain Source Voltage-: V =800V(Min)DSSFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for switching regulators, UPS,DC-DC converters ,general purpose power amplifier applications .ABSOLUTE MAXIMUM RATIN