CMRDM7590 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: CMRDM7590
Tipo de FET: MOSFET
Polaridad de transistor: P
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 0.125 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 20 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 8 V
|Id|ⓘ - Corriente continua de drenaje: 0.14 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Cossⓘ - Capacitancia de salida: 2.7 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 5 Ohm
Paquete / Cubierta: SOT-963
Búsqueda de reemplazo de CMRDM7590 MOSFET
CMRDM7590 Datasheet (PDF)
cmrdm7590.pdf

CMRDM7590SURFACE MOUNTwww.centralsemi.comDUAL P-CHANNELDESCRIPTION:ENHANCEMENT-MODEThe CENTRAL SEMICONDUCTOR CMRDM7590 is SILICON MOSFETSan Enhancement-mode Dual P-Channel Field Effect Transistor designed for high speed pulsed amplifier and driver applications. This MOSFET offers Low rDS(ON) and Low Threshold Voltage.MARKING CODE: CWFEATURES:SOT-963 CASE Power D
cmrdm3575.pdf

CMRDM3575SURFACE MOUNTwww.centralsemi.comN-CHANNEL AND P-CHANNELDESCRIPTION:ENHANCEMENT-MODEThe CENTRAL SEMICONDUCTOR CMRDM3575 COMPLEMENTARY SILICON MOSFETSconsists of complementary N-Channel and P-Channel Enhancement-mode silicon MOSFETs designed for high speed pulsed amplifier and driver applications. These MOSFETs offer Low rDS(ON) and Low Threshold Voltage.MARKING
cmrdm3590.pdf

CMRDM3590SURFACE MOUNTwww.centralsemi.comDUAL N-CHANNELDESCRIPTION:ENHANCEMENT-MODEThe CENTRAL SEMICONDUCTOR CMRDM3590 is SILICON MOSFETSan Enhancement-mode Dual N-Channel Field Effect Transistor, manufactured by the N-Channel DMOS Process, designed for high speed pulsed amplifier and driver applications. This MOSFET offers Low rDS(ON) and Low Threshold Voltage.MARKING
Otros transistores... CMPF5484 , CMPF5485 , CMPF5486 , CMPFJ175 , CMPFJ176 , CMPFJ310 , CMRDM3575 , CMRDM3590 , IRFB4227 , CMT01N60 , CMT14N50 , CMT2N7002 , CMT2N7002AG , CMT2N7002K , CMT2N7002WG , CMUDM7001 , CMUDM7004 .
History: 2N5640 | FMI13N60E | DM10N65C-2
History: 2N5640 | FMI13N60E | DM10N65C-2



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