CMRDM7590
MOSFET. Datasheet pdf. Equivalent
Type Designator: CMRDM7590
Marking Code: CW
Type of Transistor: MOSFET
Type of Control Channel: P
-Channel
Pdⓘ
- Maximum Power Dissipation: 0.125
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 8
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1
V
|Id|ⓘ - Maximum Drain Current: 0.14
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 0.536
nC
Cossⓘ -
Output Capacitance: 2.7
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 5
Ohm
Package:
SOT-963
CMRDM7590
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
CMRDM7590
Datasheet (PDF)
..1. Size:416K central
cmrdm7590.pdf
CMRDM7590SURFACE MOUNTwww.centralsemi.comDUAL P-CHANNELDESCRIPTION:ENHANCEMENT-MODEThe CENTRAL SEMICONDUCTOR CMRDM7590 is SILICON MOSFETSan Enhancement-mode Dual P-Channel Field Effect Transistor designed for high speed pulsed amplifier and driver applications. This MOSFET offers Low rDS(ON) and Low Threshold Voltage.MARKING CODE: CWFEATURES:SOT-963 CASE Power D
9.1. Size:415K central
cmrdm3575.pdf
CMRDM3575SURFACE MOUNTwww.centralsemi.comN-CHANNEL AND P-CHANNELDESCRIPTION:ENHANCEMENT-MODEThe CENTRAL SEMICONDUCTOR CMRDM3575 COMPLEMENTARY SILICON MOSFETSconsists of complementary N-Channel and P-Channel Enhancement-mode silicon MOSFETs designed for high speed pulsed amplifier and driver applications. These MOSFETs offer Low rDS(ON) and Low Threshold Voltage.MARKING
9.2. Size:416K central
cmrdm3590.pdf
CMRDM3590SURFACE MOUNTwww.centralsemi.comDUAL N-CHANNELDESCRIPTION:ENHANCEMENT-MODEThe CENTRAL SEMICONDUCTOR CMRDM3590 is SILICON MOSFETSan Enhancement-mode Dual N-Channel Field Effect Transistor, manufactured by the N-Channel DMOS Process, designed for high speed pulsed amplifier and driver applications. This MOSFET offers Low rDS(ON) and Low Threshold Voltage.MARKING
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