CMUDM8005 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: CMUDM8005

Tipo de FET: MOSFET

Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 0.3 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 20 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 8 V

|Id|ⓘ - Corriente continua de drenaje: 0.65 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Cossⓘ - Capacitancia de salida: 21 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.36 Ohm

Encapsulados: SOT-523

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CMUDM8005 datasheet

 ..1. Size:393K  central
 cmudm8005.pdf pdf_icon

CMUDM8005

CMUDM8005 SURFACE MOUNT www.centralsemi.com P-CHANNEL DESCRIPTION ENHANCEMENT-MODE The CENTRAL SEMICONDUCTOR CMUDM8005 SILICON MOSFET is an Enhancement-mode P-Channel MOSFET, manufactured by the P-Channel DMOS Process, designed for high speed pulsed amplifier and driver applications. This MOSFET offers Low rDS(ON) and Low Theshold Voltage. MARKING CODE 5C8 FEATURES SOT-52

 6.1. Size:394K  central
 cmudm8004.pdf pdf_icon

CMUDM8005

CMUDM8004 SURFACE MOUNT www.centralsemi.com P-CHANNEL DESCRIPTION ENHANCEMENT-MODE The CENTRAL SEMICONDUCTOR CMUDM8004 SILICON MOSFET is an Enhancement-mode P-Channel MOSFET, manufactured by the P-Channel DMOS Process, designed for high speed pulsed amplifier and driver applications. This MOSFET offers Low rDS(on) and Low Theshold Voltage. MARKING CODE 84C SOT-523 CASE FEA

 6.2. Size:341K  central
 cmudm8001.pdf pdf_icon

CMUDM8005

CMUDM8001 SURFACE MOUNT www.centralsemi.com P-CHANNEL DESCRIPTION ENHANCEMENT-MODE The CENTRAL SEMICONDUCTOR CMUDM8001 SILICON MOSFET is a P-Channel Enhancement-mode Silicon MOSFET, manufactured by the P-Channel DMOS Process, designed for high speed pulsed amplifier and driver applications. This MOSFET offers Low rDS(ON) and Low Theshold Voltage. MARKING CODE C8A FEATURES

 9.1. Size:622K  central
 cmudm7590.pdf pdf_icon

CMUDM8005

TM CMUDM3590 N-CH Central CMUDM7590 P-CH Semiconductor Corp. SURFACE MOUNT DESCRIPTION N-CHANNEL AND P-CHANNEL The CENTRAL SEMICONDUCTOR CMUDM3590 ENHANCEMENT-MODE and CMUDM7590 are complementary N-Channel COMPLEMENTARY MOSFETS and P-Channel Enhancement-mode silicon MOSFETs designed for high speed pulsed amplifier and driver applications. These devices offer desirable MOSFET e

MOSTRAR MÁS

Otros transistores... CMT2N7002K, CMT2N7002WG, CMUDM7001, CMUDM7004, CMUDM7005, CMUDM7590, CMUDM8001, CMUDM8004, 2N7002, CMXDM7002A, CP640, CP643, CP650, CP651, CP664, CP665, CP666