CMUDM8005
MOSFET. Datasheet pdf. Equivalent
Type Designator: CMUDM8005
Marking Code: 5C8
Type of Transistor: MOSFET
Type of Control Channel: P
-Channel
Pdⓘ
- Maximum Power Dissipation: 0.3
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 8
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1
V
|Id|ⓘ - Maximum Drain Current: 0.65
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 1.2
nC
Cossⓘ -
Output Capacitance: 21
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.36
Ohm
Package:
SOT-523
CMUDM8005
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
CMUDM8005
Datasheet (PDF)
..1. Size:393K central
cmudm8005.pdf 
CMUDM8005SURFACE MOUNTwww.centralsemi.comP-CHANNELDESCRIPTION:ENHANCEMENT-MODEThe CENTRAL SEMICONDUCTOR CMUDM8005 SILICON MOSFETis an Enhancement-mode P-Channel MOSFET, manufactured by the P-Channel DMOS Process, designed for high speed pulsed amplifier and driver applications. This MOSFET offers Low rDS(ON) and Low Theshold Voltage.MARKING CODE: 5C8FEATURES:SOT-52
6.1. Size:394K central
cmudm8004.pdf
CMUDM8004SURFACE MOUNTwww.centralsemi.comP-CHANNELDESCRIPTION:ENHANCEMENT-MODEThe CENTRAL SEMICONDUCTOR CMUDM8004 SILICON MOSFETis an Enhancement-mode P-Channel MOSFET, manufactured by the P-Channel DMOS Process, designed for high speed pulsed amplifier and driver applications. This MOSFET offers Low rDS(on) and Low Theshold Voltage.MARKING CODE: 84CSOT-523 CASEFEA
6.2. Size:341K central
cmudm8001.pdf
CMUDM8001SURFACE MOUNTwww.centralsemi.comP-CHANNELDESCRIPTION:ENHANCEMENT-MODEThe CENTRAL SEMICONDUCTOR CMUDM8001 SILICON MOSFETis a P-Channel Enhancement-mode Silicon MOSFET, manufactured by the P-Channel DMOS Process, designed for high speed pulsed amplifier and driver applications. This MOSFET offers Low rDS(ON) and Low Theshold Voltage.MARKING CODE: C8AFEATURES:
9.1. Size:622K central
cmudm7590.pdf
TMCMUDM3590 N-CHCentralCMUDM7590 P-CHSemiconductor Corp.SURFACE MOUNTDESCRIPTION:N-CHANNEL AND P-CHANNELThe CENTRAL SEMICONDUCTOR CMUDM3590 ENHANCEMENT-MODEand CMUDM7590 are complementary N-Channel COMPLEMENTARY MOSFETSand P-Channel Enhancement-mode silicon MOSFETsdesigned for high speed pulsed amplifier and driverapplications. These devices offer desirable MOSFETe
9.2. Size:341K central
cmudm7001.pdf
CMUDM7001SURFACE MOUNTwww.centralsemi.comN-CHANNELDESCRIPTION:ENHANCEMENT-MODEThe CENTRAL SEMICONDUCTOR CMUDM7001 SILICON MOSFETis an N-Channel Enhancement-mode Silicon MOSFET, manufactured by the N-Channel DMOS Process, designed for high speed pulsed amplifier and driver applications. This MOSFET offers Low rDS(ON) and Low Theshold Voltage.MARKING CODE: C7AFEATURES:
9.3. Size:392K central
cmudm7004.pdf
CMUDM7004SURFACE MOUNTwww.centralsemi.comN-CHANNELDESCRIPTION:ENHANCEMENT-MODEThe CENTRAL SEMICONDUCTOR CMUDM7004 SILICON MOSFETis an Enhancement-mode N-Channel MOSFET, manufactured by the N-Channel DMOS Process, designed for high speed pulsed amplifier and driver applications. This MOSFET offers Low rDS(on) and Low Theshold Voltage.MARKING CODE: 74CFEATURES:SOT-52
9.4. Size:392K central
cmudm7005.pdf
CMUDM7005SURFACE MOUNTwww.centralsemi.comN-CHANNELDESCRIPTION:ENHANCEMENT-MODEThe CENTRAL SEMICONDUCTOR CMUDM7005 SILICON MOSFETis an Enhancement-mode N-Channel MOSFET, manufactured by the N-Channel DMOS Process, designed for high speed pulsed amplifier and driver applications. This MOSFET offers Low rDS(ON) and Low Theshold Voltage.MARKING CODE: 5C7FEATURES:SOT-52
Datasheet: WPB4002
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