CS12N60FA9HD MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: CS12N60FA9HD

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 55 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 600 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V

|Id|ⓘ - Corriente continua de drenaje: 12 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 19 nS

Cossⓘ - Capacitancia de salida: 187 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.65 Ohm

Encapsulados: TO-220F

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CS12N60FA9HD datasheet

 ..1. Size:354K  wuxi china
 cs12n60fa9hd.pdf pdf_icon

CS12N60FA9HD

Silicon N-Channel Power MOSFET R CS12N60F A9HD VDSS 600 V General Description ID 12 A CS12N60F A9HD, the silicon N-channel Enhanced PD (TC=25 ) 55 W VDMOSFETs, is obtained by the self-aligned planar RDS(ON)Typ 0.5 Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in vario

 3.1. Size:192K  wuxi china
 cs12n60fa9h.pdf pdf_icon

CS12N60FA9HD

Silicon N-Channel Power MOSFET R CS12N60F A9H VDSS 600 V General Description ID 12 A CS12N60F A9H, the silicon N-channel Enhanced PD (TC=25 ) 55 W VDMOSFETs, is obtained by the self-aligned planar RDS(ON)Typ 0.5 Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various

 4.1. Size:270K  wuxi china
 cs12n60fa9r.pdf pdf_icon

CS12N60FA9HD

Silicon N-Channel Power MOSFET R CS12N60F A9R General Description VDSS 600 V CS12N60F A9R, the silicon N-channel Enhanced ID 12 A PD(TC=25 ) 42 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.57 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various p

 6.1. Size:1207K  jilin sino
 jcs12n60ct jcs12n60ft jcs12n60st jcs12n60bt.pdf pdf_icon

CS12N60FA9HD

N R N-CHANNEL MOSFET JCS12N60T Package MAIN CHARACTERISTICS ID 12.0A VDSS 600 V Rdson-max 0.65 @Vgs=10V Qg 39 nC APPLICATIONS High efficiency switch mode power supplies Electronic lamp ballasts LED based on half bridge L

MOSTRAR MÁS

Otros transistores... CS120NF10, CS123, CS12N10, CS12N60, CS12N60A8H, CS12N60A8HD, CS12N60F, CS12N60FA9H, 18N50, CS12N65A8H, CS12N65FA9H, CS138, CS13N15D, CS13N50A8H, CS13N50FA9H, CS1405, CS140N10A