Справочник MOSFET. CS12N60FA9HD

 

CS12N60FA9HD Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: CS12N60FA9HD
   Тип транзистора: MOSFET
   Полярность: N
   Pd ⓘ - Максимальная рассеиваемая мощность: 55 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 600 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
   |Id| ⓘ - Максимально допустимый постоянный ток стока: 12 A
   Tj ⓘ - Максимальная температура канала: 150 °C
   tr ⓘ - Время нарастания: 19 ns
   Cossⓘ - Выходная емкость: 187 pf
   Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.65 Ohm
   Тип корпуса: TO-220F
 

 Аналог (замена) для CS12N60FA9HD

   - подбор ⓘ MOSFET транзистора по параметрам

 

CS12N60FA9HD Datasheet (PDF)

 ..1. Size:354K  wuxi china
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CS12N60FA9HD

Silicon N-Channel Power MOSFET R CS12N60F A9HD VDSS 600 V General Description ID 12 A CS12N60F A9HD, the silicon N-channel Enhanced PD (TC=25) 55 W VDMOSFETs, is obtained by the self-aligned planar RDS(ON)Typ 0.5 Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in vario

 3.1. Size:192K  wuxi china
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CS12N60FA9HD

Silicon N-Channel Power MOSFET R CS12N60F A9H VDSS 600 V General Description ID 12 A CS12N60F A9H, the silicon N-channel Enhanced PD (TC=25) 55 W VDMOSFETs, is obtained by the self-aligned planar RDS(ON)Typ 0.5 Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various

 4.1. Size:270K  wuxi china
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CS12N60FA9HD

Silicon N-Channel Power MOSFET R CS12N60F A9R General Description VDSS 600 V CS12N60F A9R, the silicon N-channel Enhanced ID 12 A PD(TC=25) 42 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.57 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various p

 6.1. Size:1207K  jilin sino
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CS12N60FA9HD

N RN-CHANNEL MOSFET JCS12N60T Package MAIN CHARACTERISTICS ID 12.0A VDSS 600 V Rdson-max 0.65 @Vgs=10V Qg 39 nC APPLICATIONS High efficiency switch mode power supplies Electronic lamp ballasts LED based on half bridge L

Другие MOSFET... CS120NF10 , CS123 , CS12N10 , CS12N60 , CS12N60A8H , CS12N60A8HD , CS12N60F , CS12N60FA9H , 75N75 , CS12N65A8H , CS12N65FA9H , CS138 , CS13N15D , CS13N50A8H , CS13N50FA9H , CS1405 , CS140N10A .

History: AM4512AC | 2SK1330 | IXFN70N60Q2 | AP50T10GP | BUK9MPP-65PLL | 8N65KG-TF3T-T | TW1754SI-X

 

 
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