CS13N50A8H Todos los transistores

 ..1. Size:357K  wuxi china
 cs13n50a8h.pdf

Silicon N-Channel Power MOSFET R CS13N50 A8H VDSS 500 V General Description ID 13 A CS13N50 A8H, the silicon N-channel Enhanced PD (TC=25 ) 150 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.34 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various p

 7.1. Size:1016K  1
 jcs13n50ft.pdf

N N- CHANNEL MOSFET R JCS13N50FT MAIN CHARACTERISTICS Package ID 13 A VDSS 500 V Rdson-max @Vgs=10V 0.46 Qg-typ 37 nC APPLICATIONS High frequency switching mode power supply UPS Electronic ballast UPS FEATUR

 7.2. Size:1655K  jilin sino
 jcs13n50bc jcs13n50sc jcs13n50cc jcs13n50fc.pdf

 7.3. Size:1016K  jilin sino
 jcs13n50ft.pdf

N N- CHANNEL MOSFET R JCS13N50FT MAIN CHARACTERISTICS Package ID 13 A VDSS 500 V Rdson-max @Vgs=10V 0.46 Qg-typ 37 nC APPLICATIONS High frequency switching mode power supply UPS Electronic ballast UPS FEATUR

 7.4. Size:489K  crhj
 cs13n50 a8d.pdf

Silicon N-Channel Power MOSFET R CS13N50 A8D VDSS 500 V General Description ID 13 A CS13N50 A8D, the silicon N-channel Enhanced PD (TC=25 ) 125 W VDMOSFETs, is obtained by the self-aligned planar RDS(ON)Typ 0.4 Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various

 7.5. Size:486K  crhj
 cs13n50f a9d.pdf

Silicon N-Channel Power MOSFET R CS13N50F A9D VDSS 500 V General Description ID 13 A CS13N50F A9D, the silicon N-channel Enhanced PD (TC=25 ) 60 W VDMOSFETs, is obtained by the self-aligned planar RDS(ON)Typ 0.4 Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various po

 7.6. Size:265K  crhj
 cs13n50 a8r.pdf

Silicon N-Channel Power MOSFET R CS13N50 A8R General Description VDSS 500 V CS13N50 A8R, the silicon N-channel Enhanced ID 13 A PD(TC=25 ) 150 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.4 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various pow

 7.7. Size:357K  crhj
 cs13n50 a8h.pdf

Silicon N-Channel Power MOSFET R CS13N50 A8H VDSS 500 V General Description ID 13 A CS13N50 A8H, the silicon N-channel Enhanced PD (TC=25 ) 150 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.34 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various p

 7.8. Size:268K  crhj
 cs13n50f a9r.pdf

Silicon N-Channel Power MOSFET R CS13N50F A9R General Description VDSS 500 V CS13N50F A9R, the silicon N-channel Enhanced ID 13 A PD(TC=25 ) 42 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.4 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various po

 7.9. Size:346K  crhj
 cs13n50f a9h.pdf

Silicon N-Channel Power MOSFET R CS13N50F A9H VDSS 500 V General Description ID 13 A CS13N50F A9H, the silicon N-channel Enhanced PD (TC=25 ) 60 W VDMOSFETs, is obtained by the self-aligned planar RDS(ON)Typ 0.34 Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in variou

 7.10. Size:226K  wuxi china
 cs13n50fa9h.pdf

Silicon N-Channel Power MOSFET R CS13N50F A9H VDSS 500 V General Description ID 13 A CS13N50F A9H, the silicon N-channel Enhanced PD (TC=25 ) 60 W VDMOSFETs, is obtained by the self-aligned planar RDS(ON)Typ 0.34 Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in variou

 7.11. Size:268K  wuxi china
 cs13n50fa9r.pdf

Silicon N-Channel Power MOSFET R CS13N50F A9R General Description VDSS 500 V CS13N50F A9R, the silicon N-channel Enhanced ID 13 A PD(TC=25 ) 42 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.4 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various po