CS13N50A8H MOSFET. Datasheet pdf. Equivalent
Type Designator: CS13N50A8H
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 150 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ - Maximum Drain Current: 13 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 45 nC
trⓘ - Rise Time: 27 nS
Cossⓘ - Output Capacitance: 210 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.45 Ohm
Package: TO-220AB
CS13N50A8H Transistor Equivalent Substitute - MOSFET Cross-Reference Search
CS13N50A8H Datasheet (PDF)
cs13n50a8h.pdf
Silicon N-Channel Power MOSFET R CS13N50 A8H VDSS 500 V General Description ID 13 A CS13N50 A8H, the silicon N-channel Enhanced PD (TC=25) 150 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.34 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various p
jcs13n50ft.pdf
N N- CHANNEL MOSFET RJCS13N50FT MAIN CHARACTERISTICS Package ID 13 A VDSS 500 V Rdson-max@Vgs=10V 0.46 Qg-typ 37 nC APPLICATIONS High frequency switching mode power supply UPS Electronic ballast UPS FEATUR
jcs13n50bc jcs13n50sc jcs13n50cc jcs13n50fc.pdf
N N- CHANNEL MOSFET RJCS13N50C MAIN CHARACTERISTICS Package ID 13 A VDSS 500 V Rdson@Vgs=10V 0.49 Qg 27 nC APPLICATIONS High frequency switching mode power supply UPS Electronic ballast UPS FEATURES
jcs13n50ft.pdf
N N- CHANNEL MOSFET RJCS13N50FT MAIN CHARACTERISTICS Package ID 13 A VDSS 500 V Rdson-max@Vgs=10V 0.46 Qg-typ 37 nC APPLICATIONS High frequency switching mode power supply UPS Electronic ballast UPS FEATUR
cs13n50 a8d.pdf
Silicon N-Channel Power MOSFET R CS13N50 A8D VDSS 500 V General Description ID 13 A CS13N50 A8D, the silicon N-channel Enhanced PD (TC=25) 125 W VDMOSFETs, is obtained by the self-aligned planar RDS(ON)Typ 0.4 Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various
cs13n50f a9d.pdf
Silicon N-Channel Power MOSFET R CS13N50F A9D VDSS 500 V General Description ID 13 A CS13N50F A9D, the silicon N-channel Enhanced PD (TC=25) 60 W VDMOSFETs, is obtained by the self-aligned planar RDS(ON)Typ 0.4 Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various po
cs13n50 a8r.pdf
Silicon N-Channel Power MOSFET R CS13N50 A8R General Description VDSS 500 V CS13N50 A8R, the silicon N-channel Enhanced ID 13 A PD(TC=25) 150 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.4 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various pow
cs13n50 a8h.pdf
Silicon N-Channel Power MOSFET R CS13N50 A8H VDSS 500 V General Description ID 13 A CS13N50 A8H, the silicon N-channel Enhanced PD (TC=25) 150 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.34 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various p
cs13n50f a9r.pdf
Silicon N-Channel Power MOSFET R CS13N50F A9R General Description VDSS 500 V CS13N50F A9R, the silicon N-channel Enhanced ID 13 A PD(TC=25) 42 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.4 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various po
cs13n50f a9h.pdf
Silicon N-Channel Power MOSFET R CS13N50F A9H VDSS 500 V General Description ID 13 A CS13N50F A9H, the silicon N-channel Enhanced PD (TC=25) 60 W VDMOSFETs, is obtained by the self-aligned planar RDS(ON)Typ 0.34 Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in variou
cs13n50fa9h.pdf
Silicon N-Channel Power MOSFET R CS13N50F A9H VDSS 500 V General Description ID 13 A CS13N50F A9H, the silicon N-channel Enhanced PD (TC=25) 60 W VDMOSFETs, is obtained by the self-aligned planar RDS(ON)Typ 0.34 Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in variou
cs13n50fa9r.pdf
Silicon N-Channel Power MOSFET R CS13N50F A9R General Description VDSS 500 V CS13N50F A9R, the silicon N-channel Enhanced ID 13 A PD(TC=25) 42 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.4 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various po
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
History: WMQ023N03LG2 | FCPF150N65F | FDA28N50F
History: WMQ023N03LG2 | FCPF150N65F | FDA28N50F
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