CS1N80 Todos los transistores

 

CS1N80 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: CS1N80
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 2.1 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 800 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 0.2 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 20 Ohm
   Paquete / Cubierta: SOT-223
 

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CS1N80 Datasheet (PDF)

 ..1. Size:410K  crhj
 cs1n80 a3h.pdf pdf_icon

CS1N80

Silicon N-Channel Power MOSFET R CS1N80 A3H General Description VDSS 800 V CS1N80 A3H, the silicon N-channel Enhanced ID 1 A PD (TC=25) 30 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 12 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power sw

 ..2. Size:523K  crhj
 cs1n80 a4h.pdf pdf_icon

CS1N80

Silicon N-Channel Power MOSFET R CS1N80 A4H General Description VDSS 800 V CS1N80 A4H, the silicon N-channel Enhanced ID 1 A PD (TC=25) 30 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 12 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power

 ..3. Size:536K  crhj
 cs1n80 a1h.pdf pdf_icon

CS1N80

Silicon N-Channel Power MOSFET R CS1N80 A1H General Description VDSS 800 V CS1N80 A1H, the silicon N-channel Enhanced ID 1 A PD (TC=25) 3 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 12 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power sw

 ..4. Size:101K  china
 cs1n80.pdf pdf_icon

CS1N80

CS1N80 N PD TC=25 2.1 W 0.02 W/ ID VGS=10V,TC=25 0.2 A ID VGS=10V,TC=100 0.12 A VGS 30 V Tjm +150 Tstg -55 +150 RthJC 60 /W BVDSS VGS=0V,ID=0.25mA 800 V RDS on VGS=10V,ID=0.1A 15.5 20

MOSTRAR MÁS

Otros transistores... CS1N60C1H , CS1N60C3H , CS1N60F , CS1N65A1 , CS1N65A3 , CS1N65B1 , CS1N65B3 , CS1N70A3H-G , IRFP064N , CS1N80A1H , CS1N80A3H , CS1N80A4H , CS20N03D , CS20N50A8H , CS20N50ANH , CS20N60 , CS20N60A8H .

 

 
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