CS1N80A3H MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: CS1N80A3H
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 30 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 800 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
|Id|ⓘ - Corriente continua de drenaje: 1 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 4.6 nS
Cossⓘ - Capacitancia de salida: 16 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 15 Ohm
Paquete / Cubierta: TO-251
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CS1N80A3H Datasheet (PDF)
cs1n80a3h.pdf
Silicon N-Channel Power MOSFET R CS1N80 A3H General Description VDSS 800 V CS1N80 A3H, the silicon N-channel Enhanced ID 1 A PD (TC=25) 30 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 12 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power sw
cs1n80a1h.pdf
Silicon N-Channel Power MOSFET R CS1N80 A1H General Description VDSS 800 V CS1N80 A1H, the silicon N-channel Enhanced ID 1 A PD (TC=25) 3 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 12 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power sw
cs1n80a4h.pdf
Silicon N-Channel Power MOSFET R CS1N80 A4H General Description VDSS 800 V CS1N80 A4H, the silicon N-channel Enhanced ID 1 A PD (TC=25) 30 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 12 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power
cs1n80 a3h.pdf
Silicon N-Channel Power MOSFET R CS1N80 A3H General Description VDSS 800 V CS1N80 A3H, the silicon N-channel Enhanced ID 1 A PD (TC=25) 30 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 12 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power sw
Otros transistores... CS1N60F , CS1N65A1 , CS1N65A3 , CS1N65B1 , CS1N65B3 , CS1N70A3H-G , CS1N80 , CS1N80A1H , IRFP064N , CS1N80A4H , CS20N03D , CS20N50A8H , CS20N50ANH , CS20N60 , CS20N60A8H , CS20N60ANH , CS20N60FA9H .
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