CS1N80A3H MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: CS1N80A3H

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 30 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 800 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V

|Id|ⓘ - Corriente continua de drenaje: 1 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 4.6 nS

Cossⓘ - Capacitancia de salida: 16 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 15 Ohm

Encapsulados: TO-251

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CS1N80A3H datasheet

 ..1. Size:410K  wuxi china
 cs1n80a3h.pdf pdf_icon

CS1N80A3H

Silicon N-Channel Power MOSFET R CS1N80 A3H General Description VDSS 800 V CS1N80 A3H, the silicon N-channel Enhanced ID 1 A PD (TC=25 ) 30 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 12 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power sw

 7.1. Size:536K  wuxi china
 cs1n80a1h.pdf pdf_icon

CS1N80A3H

Silicon N-Channel Power MOSFET R CS1N80 A1H General Description VDSS 800 V CS1N80 A1H, the silicon N-channel Enhanced ID 1 A PD (TC=25 ) 3 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 12 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power sw

 7.2. Size:523K  wuxi china
 cs1n80a4h.pdf pdf_icon

CS1N80A3H

Silicon N-Channel Power MOSFET R CS1N80 A4H General Description VDSS 800 V CS1N80 A4H, the silicon N-channel Enhanced ID 1 A PD (TC=25 ) 30 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 12 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power

 8.1. Size:410K  crhj
 cs1n80 a3h.pdf pdf_icon

CS1N80A3H

Silicon N-Channel Power MOSFET R CS1N80 A3H General Description VDSS 800 V CS1N80 A3H, the silicon N-channel Enhanced ID 1 A PD (TC=25 ) 30 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 12 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power sw

MOSTRAR MÁS

Otros transistores... CS1N60F, CS1N65A1, CS1N65A3, CS1N65B1, CS1N65B3, CS1N70A3H-G, CS1N80, CS1N80A1H, IRF730, CS1N80A4H, CS20N03D, CS20N50A8H, CS20N50ANH, CS20N60, CS20N60A8H, CS20N60ANH, CS20N60FA9H