CS1N80A3H Specs and Replacement

Type Designator: CS1N80A3H

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 30 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 800 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 1 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 4.6 nS

Cossⓘ - Output Capacitance: 16 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 15 Ohm

Package: TO-251

CS1N80A3H substitution

- MOSFET ⓘ Cross-Reference Search

 

CS1N80A3H datasheet

 ..1. Size:410K  wuxi china
 cs1n80a3h.pdf pdf_icon

CS1N80A3H

Silicon N-Channel Power MOSFET R CS1N80 A3H General Description VDSS 800 V CS1N80 A3H, the silicon N-channel Enhanced ID 1 A PD (TC=25 ) 30 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 12 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power sw... See More ⇒

 7.1. Size:536K  wuxi china
 cs1n80a1h.pdf pdf_icon

CS1N80A3H

Silicon N-Channel Power MOSFET R CS1N80 A1H General Description VDSS 800 V CS1N80 A1H, the silicon N-channel Enhanced ID 1 A PD (TC=25 ) 3 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 12 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power sw... See More ⇒

 7.2. Size:523K  wuxi china
 cs1n80a4h.pdf pdf_icon

CS1N80A3H

Silicon N-Channel Power MOSFET R CS1N80 A4H General Description VDSS 800 V CS1N80 A4H, the silicon N-channel Enhanced ID 1 A PD (TC=25 ) 30 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 12 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power... See More ⇒

 8.1. Size:410K  crhj
 cs1n80 a3h.pdf pdf_icon

CS1N80A3H

Silicon N-Channel Power MOSFET R CS1N80 A3H General Description VDSS 800 V CS1N80 A3H, the silicon N-channel Enhanced ID 1 A PD (TC=25 ) 30 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 12 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power sw... See More ⇒

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Detailed specifications: CS1N60F, CS1N65A1, CS1N65A3, CS1N65B1, CS1N65B3, CS1N70A3H-G, CS1N80, CS1N80A1H, IRF730, CS1N80A4H, CS20N03D, CS20N50A8H, CS20N50ANH, CS20N60, CS20N60A8H, CS20N60ANH, CS20N60FA9H

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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.