2SK1122 Todos los transistores

 

2SK1122 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: 2SK1122
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 100 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 100 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 40 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Qgⓘ - Carga de la puerta: 80 nC
   trⓘ - Tiempo de subida: 210 nS
   Cossⓘ - Capacitancia de salida: 800 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.05 Ohm
   Paquete / Cubierta: TO3P

 Búsqueda de reemplazo de MOSFET 2SK1122

 

2SK1122 Datasheet (PDF)

 ..1. Size:380K  nec
2sk1122.pdf

2SK1122 2SK1122

 8.1. Size:454K  toshiba
2sk1120.pdf

2SK1122 2SK1122

2SK1120 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOSII.5) 2SK1120 DC-DC Converter and Motor Drive Applications Unit: mm Low drain-source ON resistance : RDS (ON) = 1.5 (typ.) High forward transfer admittance : |Y | 4.0 S (typ.) fs = Low leakage current : I = 300 A (max) (V = 800 V) DSS DS Enhancement-mode : Vth = 1.5~3.5 V (V = 10 V, I = 1

 8.2. Size:54K  toshiba
2sk1124.pdf

2SK1122 2SK1122

 8.3. Size:442K  nec
2sk1123.pdf

2SK1122 2SK1122

 8.4. Size:259K  inchange semiconductor
2sk1120.pdf

2SK1122 2SK1122

isc N-Channel MOSFET Transistor 2SK1120FEATURESDrain Current I = 8.0A@ T =25D CDrain Source Voltage-: V = 1000V(Min)DSSStatic Drain-Source On-Resistance: R = 1.8(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurp

 8.5. Size:259K  inchange semiconductor
2sk1124.pdf

2SK1122 2SK1122

isc N-Channel MOSFET Transistor 2SK1124FEATURESDrain Current I = 45A@ T =25D CDrain Source Voltage-: V = 60V(Min)DSSStatic Drain-Source On-Resistance: R = 30m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpose

Otros transistores... 2SK1007-01 , 2SK1013-01 , 2SK1017 , 2SK1019 , 2SK105 , 2SK1059 , 2SK1060 , 2SK1109 , AON6414A , 2SK1123 , 2SK1132 , 2SK1133 , 2SK1177 , 2SK1178 , 2SK1179 , 2SK1180 , 2SK1181 .

 

 
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