2SK1122 PDF and Equivalents Search

 

2SK1122 Specs and Replacement

Type Designator: 2SK1122

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 100 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 40 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 210 nS

Cossⓘ - Output Capacitance: 800 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.05 Ohm

Package: TO3P

2SK1122 substitution

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2SK1122 datasheet

 ..1. Size:380K  nec
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2SK1122

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 8.1. Size:454K  toshiba
2sk1120.pdf pdf_icon

2SK1122

2SK1120 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type ( -MOSII.5) 2SK1120 DC-DC Converter and Motor Drive Applications Unit mm Low drain-source ON resistance RDS (ON) = 1.5 (typ.) High forward transfer admittance Y 4.0 S (typ.) fs = Low leakage current I = 300 A (max) (V = 800 V) DSS DS Enhancement-mode Vth = 1.5 3.5 V (V = 10 V, I = 1 ... See More ⇒

 8.2. Size:54K  toshiba
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2SK1122

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 8.3. Size:442K  nec
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2SK1122

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Detailed specifications: 2SK1007-01, 2SK1013-01, 2SK1017, 2SK1019, 2SK105, 2SK1059, 2SK1060, 2SK1109, AO3400, 2SK1123, 2SK1132, 2SK1133, 2SK1177, 2SK1178, 2SK1179, 2SK1180, 2SK1181

Keywords - 2SK1122 MOSFET specs

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.

 

 

 

 

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