2SK1122 Datasheet and Replacement
Type Designator: 2SK1122
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 100 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id|ⓘ - Maximum Drain Current: 40 A
Tjⓘ - Maximum Junction Temperature: 150 °C
trⓘ - Rise Time: 210 nS
Cossⓘ - Output Capacitance: 800 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.05 Ohm
Package: TO3P
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2SK1122 Datasheet (PDF)
2sk1120.pdf
2SK1120 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOSII.5) 2SK1120 DC-DC Converter and Motor Drive Applications Unit: mm Low drain-source ON resistance : RDS (ON) = 1.5 (typ.) High forward transfer admittance : |Y | 4.0 S (typ.) fs = Low leakage current : I = 300 A (max) (V = 800 V) DSS DS Enhancement-mode : Vth = 1.5~3.5 V (V = 10 V, I = 1
Datasheet: 2SK1007-01 , 2SK1013-01 , 2SK1017 , 2SK1019 , 2SK105 , 2SK1059 , 2SK1060 , 2SK1109 , AON6414A , 2SK1123 , 2SK1132 , 2SK1133 , 2SK1177 , 2SK1178 , 2SK1179 , 2SK1180 , 2SK1181 .
History: AP30T10GK | IRFZ48RS | 1D5N60 | SFR9034TF | WSD30L30DN | AOND62930 | IPI47N10S-33
Keywords - 2SK1122 MOSFET datasheet
2SK1122 cross reference
2SK1122 equivalent finder
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History: AP30T10GK | IRFZ48RS | 1D5N60 | SFR9034TF | WSD30L30DN | AOND62930 | IPI47N10S-33
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