CS20N50A8H Todos los transistores

 

CS20N50A8H MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: CS20N50A8H
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 230 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 500 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 20 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 75 nS
   Cossⓘ - Capacitancia de salida: 285 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.3 Ohm
   Paquete / Cubierta: TO-220AB
 

 Búsqueda de reemplazo de CS20N50A8H MOSFET

   - Selección ⓘ de transistores por parámetros

 

CS20N50A8H Datasheet (PDF)

 ..1. Size:230K  wuxi china
 cs20n50a8h.pdf pdf_icon

CS20N50A8H

Silicon N-Channel Power MOSFET R CS20N50 A8H General Description VDSS 500 V CS20N50 A8H, the silicon N-channel Enhanced ID 20 A PD (TC=25) 230 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.25 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various p

 6.1. Size:363K  wuxi china
 cs20n50anh.pdf pdf_icon

CS20N50A8H

Silicon N-Channel Power MOSFET R CS20N50 ANH General Description VDSS 500 V CS20N50 ANH, the silicon N-channel Enhanced ID 20 A PD (TC=25) 230 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.25 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various po

 7.1. Size:352K  crhj
 cs20n50 a8h.pdf pdf_icon

CS20N50A8H

Silicon N-Channel Power MOSFET R CS20N50 A8H General Description VDSS 500 V CS20N50 A8H, the silicon N-channel Enhanced ID 20 A PD (TC=25) 230 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.25 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various p

 7.2. Size:363K  crhj
 cs20n50 anh.pdf pdf_icon

CS20N50A8H

Silicon N-Channel Power MOSFET R CS20N50 ANH General Description VDSS 500 V CS20N50 ANH, the silicon N-channel Enhanced ID 20 A PD (TC=25) 230 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.25 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various po

MOSTRAR MÁS

Otros transistores... CS1N65B1 , CS1N65B3 , CS1N70A3H-G , CS1N80 , CS1N80A1H , CS1N80A3H , CS1N80A4H , CS20N03D , IRF740 , CS20N50ANH , CS20N60 , CS20N60A8H , CS20N60ANH , CS20N60FA9H , CS20N65FA9H , CS20N90ANRD , CS2110K1 .

History: AM4401P | MTB60P06H8 | STP8NM60D | IRFIZ48N | 2SK2640-01MR | AM3902N | SQ3419EEV

 

 
Back to Top

 


 
.