CS20N50A8H Specs and Replacement

Type Designator: CS20N50A8H

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 230 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 20 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 75 nS

Cossⓘ - Output Capacitance: 285 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.3 Ohm

Package: TO-220AB

CS20N50A8H substitution

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CS20N50A8H datasheet

 ..1. Size:230K  wuxi china
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CS20N50A8H

Silicon N-Channel Power MOSFET R CS20N50 A8H General Description VDSS 500 V CS20N50 A8H, the silicon N-channel Enhanced ID 20 A PD (TC=25 ) 230 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.25 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various p... See More ⇒

 6.1. Size:363K  wuxi china
 cs20n50anh.pdf pdf_icon

CS20N50A8H

Silicon N-Channel Power MOSFET R CS20N50 ANH General Description VDSS 500 V CS20N50 ANH, the silicon N-channel Enhanced ID 20 A PD (TC=25 ) 230 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.25 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various po... See More ⇒

 7.1. Size:352K  crhj
 cs20n50 a8h.pdf pdf_icon

CS20N50A8H

Silicon N-Channel Power MOSFET R CS20N50 A8H General Description VDSS 500 V CS20N50 A8H, the silicon N-channel Enhanced ID 20 A PD (TC=25 ) 230 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.25 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various p... See More ⇒

 7.2. Size:363K  crhj
 cs20n50 anh.pdf pdf_icon

CS20N50A8H

Silicon N-Channel Power MOSFET R CS20N50 ANH General Description VDSS 500 V CS20N50 ANH, the silicon N-channel Enhanced ID 20 A PD (TC=25 ) 230 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.25 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various po... See More ⇒

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Detailed specifications: CS1N65B1, CS1N65B3, CS1N70A3H-G, CS1N80, CS1N80A1H, CS1N80A3H, CS1N80A4H, CS20N03D, IRF740, CS20N50ANH, CS20N60, CS20N60A8H, CS20N60ANH, CS20N60FA9H, CS20N65FA9H, CS20N90ANRD, CS2110K1

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