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CS20N50ANH MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: CS20N50ANH

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 230 W

Tensión drenaje-fuente (Vds): 500 V

Tensión compuerta-fuente (Vgs): 30 V

Corriente continua de drenaje (Id): 20 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Tensión umbral compuerta-fuente Vgs(th): 4 V

Carga de compuerta (Qg): 63 nC

Tiempo de elevación (tr): 75 nS

Conductancia de drenaje-sustrato (Cd): 285 pF

Resistencia drenaje-fuente RDS(on): 0.3 Ohm

Empaquetado / Estuche: TO-3P

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CS20N50ANH Datasheet (PDF)

1.1. cs20n50anh.pdf Size:363K _update_mosfet

CS20N50ANH
CS20N50ANH

Silicon N-Channel Power MOSFET R ○ CS20N50 ANH General Description: VDSS 500 V CS20N50 ANH, the silicon N-channel Enhanced ID 20 A PD (TC=25℃) 230 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.25 Ω which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various po

2.1. cs20n50a8h.pdf Size:352K _update_mosfet

CS20N50ANH
CS20N50ANH

Silicon N-Channel Power MOSFET R ○ CS20N50 A8H General Description: VDSS 500 V CS20N50 A8H, the silicon N-channel Enhanced ID 20 A PD (TC=25℃) 230 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.25 Ω which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various p

 3.1. cs20n50 a8h.pdf Size:352K _crhj

CS20N50ANH
CS20N50ANH

Silicon N-Channel Power MOSFET R ○ CS20N50 A8H General Description: VDSS 500 V CS20N50 A8H, the silicon N-channel Enhanced ID 20 A PD (TC=25℃) 230 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.25 Ω which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various p

3.2. cs20n50 anh.pdf Size:363K _crhj

CS20N50ANH
CS20N50ANH

Silicon N-Channel Power MOSFET R ○ CS20N50 ANH General Description: VDSS 500 V CS20N50 ANH, the silicon N-channel Enhanced ID 20 A PD (TC=25℃) 230 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.25 Ω which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various po

Otros transistores... CED6861 , CED95P04 , CEF14P20 , CEF15P15 , CEF6601 , CEH2305 , CEH2313 , CEH2321 , 2SK170 , CEH2331 , CEH3456 , CEM2163 , CEM2187 , CEM2281 , CEM2401 , CEM2407 , CEM3053 .

 

 
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