CS20N50ANH MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: CS20N50ANH
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 230 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 500 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
|Id|ⓘ - Corriente continua de drenaje: 20 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 75 nS
Cossⓘ - Capacitancia de salida: 285 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.3 Ohm
Paquete / Cubierta: TO-3P
- Selección de transistores por parámetros
CS20N50ANH Datasheet (PDF)
cs20n50anh.pdf
Silicon N-Channel Power MOSFET R CS20N50 ANH General Description VDSS 500 V CS20N50 ANH, the silicon N-channel Enhanced ID 20 A PD (TC=25) 230 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.25 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various po
cs20n50a8h.pdf
Silicon N-Channel Power MOSFET R CS20N50 A8H General Description VDSS 500 V CS20N50 A8H, the silicon N-channel Enhanced ID 20 A PD (TC=25) 230 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.25 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various p
cs20n50 a8h.pdf
Silicon N-Channel Power MOSFET R CS20N50 A8H General Description VDSS 500 V CS20N50 A8H, the silicon N-channel Enhanced ID 20 A PD (TC=25) 230 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.25 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various p
cs20n50 anh.pdf
Silicon N-Channel Power MOSFET R CS20N50 ANH General Description VDSS 500 V CS20N50 ANH, the silicon N-channel Enhanced ID 20 A PD (TC=25) 230 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.25 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various po
Otros transistores... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
History: FTK5N80DD | DMN6040SSD | CSD85312Q3E
History: FTK5N80DD | DMN6040SSD | CSD85312Q3E
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