CS20N60 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: CS20N60

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 300 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 600 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 20 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.46 Ohm

Encapsulados: TO-258

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CS20N60 datasheet

 ..1. Size:437K  crhj
cs20n60 anh.pdf pdf_icon

CS20N60

Silicon N-Channel Power MOSFET R CS20N60 ANH VDSS 600 V General Description ID 20 A CS20N60 ANH, the silicon N-channel Enhanced PD(TC=25 ) 250 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.36 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various po

 ..2. Size:434K  crhj
cs20n60 a8h.pdf pdf_icon

CS20N60

Silicon N-Channel Power MOSFET R CS20N60 A8H VDSS 600 V General Description ID 20 A CS20N60 A8H, the silicon N-channel Enhanced PD(TC=25 ) 250 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.36 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various po

 ..3. Size:109K  china
cs20n60.pdf pdf_icon

CS20N60

CS20N60 N PD TC=25 300 W 2.38 W/ ID VGS=10V,TC=25 20 A VGS 20 V Tjm +150 Tstg -55 +150 RthJC 0.42 /W BVDSS VGS=0V,ID=0.25mA 600 V RDS on VGS=10V,ID=10A 0.32 0.46 VGS th VDS=VGS,ID=0.25m

 0.1. Size:1458K  jilin sino
jcs20n60wh.pdf pdf_icon

CS20N60

Otros transistores... CS1N70A3H-G, CS1N80, CS1N80A1H, CS1N80A3H, CS1N80A4H, CS20N03D, CS20N50A8H, CS20N50ANH, 20N60, CS20N60A8H, CS20N60ANH, CS20N60FA9H, CS20N65FA9H, CS20N90ANRD, CS2110K1, CS220N03MD, CS220N04A8H