CS20N60FA9H MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: CS20N60FA9H

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 85 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 600 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V

|Id|ⓘ - Corriente continua de drenaje: 20 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 73 nS

Cossⓘ - Capacitancia de salida: 252 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.45 Ohm

Encapsulados: TO-220F

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CS20N60FA9H datasheet

 ..1. Size:2676K  citcorp
 cs20n60fa9h.pdf pdf_icon

CS20N60FA9H

CS20N60FA9H 600V Silicon N-Channel Power MOSFET Features Outline Fast switching. TO-220F ESD improved capability. 0.189(4.80) 0.173(4.40) Low gate charge. 0.409(10.40) 0.378(9.60) 0.114(2.90) Low reverse transfer capacitances. 0.098(2.50) 100% single pulse avalanche energy test. 0.638(16.20) 0.606(15.40) Marking code Mechanical data G D S Ep

 ..2. Size:399K  wuxi china
 cs20n60fa9h.pdf pdf_icon

CS20N60FA9H

Huajing Discrete Devices R Silicon N-Channel Power MOSFET CS20N60F A9H VDSS 600 V General Description ID 20 A CS20N60F A9H, the silicon N-channel Enhanced PD(TC=25 ) 85 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.36 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transisto

 6.1. Size:1215K  jilin sino
 jcs20n60fh.pdf pdf_icon

CS20N60FA9H

N R N-CHANNEL MOSFET JCS20N60FH Package MAIN CHARACTERISTICS ID 20A VDSS 600V Rdson-max 0.39 Vgs=10V Qg-Typ 50nC APPLICATIONS High efficiency switch mode power supplies Electronic lamp ballasts LED based on half bridge LE

 6.2. Size:431K  crhj
 cs20n60f a9h.pdf pdf_icon

CS20N60FA9H

Silicon N-Channel Power MOSFET R CS20N60F A9H VDSS 600 V General Description ID 20 A CS20N60F A9H, the silicon N-channel Enhanced PD(TC=25 ) 85 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.36 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various

MOSTRAR MÁS

Otros transistores... CS1N80A3H, CS1N80A4H, CS20N03D, CS20N50A8H, CS20N50ANH, CS20N60, CS20N60A8H, CS20N60ANH, 50N06, CS20N65FA9H, CS20N90ANRD, CS2110K1, CS220N03MD, CS220N04A8H, CS2232, CS2308, CS240