CS20N60FA9H Specs and Replacement

Type Designator: CS20N60FA9H

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 85 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 20 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 73 nS

Cossⓘ - Output Capacitance: 252 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.45 Ohm

Package: TO-220F

CS20N60FA9H substitution

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CS20N60FA9H datasheet

 ..1. Size:2676K  citcorp
 cs20n60fa9h.pdf pdf_icon

CS20N60FA9H

CS20N60FA9H 600V Silicon N-Channel Power MOSFET Features Outline Fast switching. TO-220F ESD improved capability. 0.189(4.80) 0.173(4.40) Low gate charge. 0.409(10.40) 0.378(9.60) 0.114(2.90) Low reverse transfer capacitances. 0.098(2.50) 100% single pulse avalanche energy test. 0.638(16.20) 0.606(15.40) Marking code Mechanical data G D S Ep... See More ⇒

 ..2. Size:399K  wuxi china
 cs20n60fa9h.pdf pdf_icon

CS20N60FA9H

Huajing Discrete Devices R Silicon N-Channel Power MOSFET CS20N60F A9H VDSS 600 V General Description ID 20 A CS20N60F A9H, the silicon N-channel Enhanced PD(TC=25 ) 85 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.36 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transisto... See More ⇒

 6.1. Size:1215K  jilin sino
 jcs20n60fh.pdf pdf_icon

CS20N60FA9H

N R N-CHANNEL MOSFET JCS20N60FH Package MAIN CHARACTERISTICS ID 20A VDSS 600V Rdson-max 0.39 Vgs=10V Qg-Typ 50nC APPLICATIONS High efficiency switch mode power supplies Electronic lamp ballasts LED based on half bridge LE... See More ⇒

 6.2. Size:431K  crhj
 cs20n60f a9h.pdf pdf_icon

CS20N60FA9H

Silicon N-Channel Power MOSFET R CS20N60F A9H VDSS 600 V General Description ID 20 A CS20N60F A9H, the silicon N-channel Enhanced PD(TC=25 ) 85 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.36 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various ... See More ⇒

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Detailed specifications: CS1N80A3H, CS1N80A4H, CS20N03D, CS20N50A8H, CS20N50ANH, CS20N60, CS20N60A8H, CS20N60ANH, 50N06, CS20N65FA9H, CS20N90ANRD, CS2110K1, CS220N03MD, CS220N04A8H, CS2232, CS2308, CS240

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