CS20N65FA9H Todos los transistores

 

CS20N65FA9H MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: CS20N65FA9H
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 85 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 650 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 20 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 82 nS
   Cossⓘ - Capacitancia de salida: 225 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.5 Ohm
   Paquete / Cubierta: TO-220F
 

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CS20N65FA9H Datasheet (PDF)

 ..1. Size:311K  wuxi china
 cs20n65fa9h.pdf pdf_icon

CS20N65FA9H

Silicon N-Channel Power MOSFET R CS20N65F A9H VDSS 650 V General Description ID 20 A CS20N65F A9H, the silicon N-channel Enhanced PD(TC=25) 85 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.37 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various

 6.1. Size:806K  jilin sino
 jcs20n65fei.pdf pdf_icon

CS20N65FA9H

N RN-CHANNEL MOSFETJCS20N65EI Package MAIN CHARACTERISTICS ID 20A VDSS 650V Rdson-max0.42 Vgs=10V Qg-Typ 64.6nC APPLICATIONS High efficiency switch mode power supplies Electronic lamp ballasts LED based on half bridge LED power

 6.2. Size:826K  jilin sino
 jcs20n65fh jcs20n65wh.pdf pdf_icon

CS20N65FA9H

N RN-CHANNEL MOSFET JCS20N65H MAIN CHARACTERISTICS Package ID 20A VDSS 650 V Rdson-max 0.5 @Vgs=10V Qg-typ 45nC APPLICATIONS High frequency switching mode power supply Electronic ballast LED LED power supply

 6.3. Size:431K  crhj
 cs20n65f a9h.pdf pdf_icon

CS20N65FA9H

Silicon N-Channel Power MOSFET R CS20N65F A9H VDSS 650 V General Description ID 20 A CS20N65F A9H, the silicon N-channel Enhanced PD(TC=25) 85 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.37 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various

MOSTRAR MÁS

Otros transistores... CS1N80A4H , CS20N03D , CS20N50A8H , CS20N50ANH , CS20N60 , CS20N60A8H , CS20N60ANH , CS20N60FA9H , IRF640 , CS20N90ANRD , CS2110K1 , CS220N03MD , CS220N04A8H , CS2232 , CS2308 , CS240 , CS24N40A8 .

History: STP22NM60N | WMB108N03T1 | 2SK3716-Z

 

 
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