CS2N60I Todos los transistores

 ..1. Size:269K  foshan
 cs2n60i.pdf

BRI2N60(CS2N60I) N-CHANNEL MOSFET/N MOS DC/DC Purpose These devices are well suited for high efficiency switching DC/DC converters and switch mode power supplies. , , Features Low gate charge, low crss, fast switching. /Absolute maximum ratings(Ta=25

 8.1. Size:373K  no
 cs2n60-f.pdf

CS2N60(F) CS2N60(F) VDMOS 1. CS2N60(F) N 600V VDMOS VDSS RDS(ON)MAX ID CS2N60 TO-220

 8.2. Size:1199K  jilin sino
 jcs2n60.pdf

 8.3. Size:1813K  jilin sino
 jcs2n60t jcs2n60v jcs2n60r jcs2n60c jcs2n60f.pdf

R JCS2N60C JCS2N60C MAIN CHARACTERISTICS Package ID 2.0 A VDSS 600 V Rdson-max 5.0 Vgs=10V Qg-typ 8.1 nC APPLICATIONS l High efficiency switch l mode power supplies l l Electronic lamp ballasts l LED based on half bridge l LED power supplie FEATURES l Low gate c

 8.4. Size:1742K  jilin sino
 jcs2n60t jcs2n60mf jcs2n60v jcs2n60r jcs2n60c jcs2n60f.pdf

R JCS2N60C JCS2N60C MAIN CHARACTERISTICS Package ID 2.0 A VDSS 600 V Rdson-max 5.0 Vgs=10V Qg-typ 8.1 nC APPLICATIONS High efficiency switch mode power supplies Electronic lamp ballasts LED based on half bridge LED power supplie FEATURES

 8.5. Size:924K  jilin sino
 jcs2n60vb jcs2n60rb jcs2n60cb jcs2n60fb jcs2n60mb jcs2n60mfb.pdf

N R N-CHANNEL MOSFET JCS2N60B MAIN CHARACTERISTICS Package ID 2.0 A VDSS 600 V Rdson Vgs=10V 4.5 -MAX Qg-TYP 5.9nC APPLICATIONS High efficiency switch mode power supplies Electronic lamp ballasts LED based on half bridge

 8.6. Size:975K  jilin sino
 jcs2n60t jcs2n60mf jcs2n60v jcs2n60r jcs2n60n jcs2n60c jcs2n60f.pdf

 8.7. Size:572K  jilin sino
 jcs2n60mb jcs2n60mfb.pdf

 8.8. Size:1443K  jilin sino
 jcs2n60r jcs2n60v jcs2n60c jcs2n60f.pdf

 8.9. Size:153K  can-sheng
 cs2n60 to-252.pdf

ShenZhen CanSheng Industry Development Co.,Ltd ShenZhen CanSheng Industry Development Co.,Ltd ShenZhen CanSheng Industry Development Co.,Ltd www.szcansheng.com ShenZhen CanSheng Industry Development Co.,Ltd. TO-252 Plastic-Encapsulate Transistors TO-252 Plastic-Encapsulate Transistors TO-252 Plastic-Encapsulate Transistors TO-252 Plastic-Encapsula

 8.10. Size:334K  crhj
 cs2n60 a7h.pdf

Silicon N-Channel Power MOSFET R CS2N60 A7H General Description VDSS 600 V CS2N60 A7H, the silicon N-channel Enhanced ID 2 A PD (TC=25 ) 24 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 3.6 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power

 8.11. Size:334K  crhj
 cs2n60f a9h.pdf

Silicon N-Channel Power MOSFET R CS2N60F A9H General Description VDSS 600 V CS2N60F A9H, the silicon N-channel Enhanced ID 2 A PD (TC=25 ) 24 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 3.6 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various pow

 8.12. Size:357K  crhj
 cs2n60 a3h.pdf

Silicon N-Channel Power MOSFET R CS2N60 A3H General Description VDSS 600 V CS2N60 A3H, the silicon N-channel Enhanced ID 2 A PD (TC=25 ) 35 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 3.6 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power

 8.13. Size:355K  crhj
 cs2n60 a4h.pdf

Silicon N-Channel Power MOSFET R CS2N60 A4H General Description VDSS 600 V CS2N60 A4H, the silicon N-channel Enhanced ID 2 A PD (TC=25 ) 35 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 3.6 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power

 8.14. Size:356K  crhj
 cs2n60 a4t.pdf

Silicon N-Channel Power MOSFET R CS2N60 A4T General Description VDSS 600 V CS2N60 A4T, the silicon N-channel Enhanced ID 2 A PD (TC=25 ) 35 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 3.5 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power

 8.15. Size:225K  wuxi china
 cs2n60fa9h.pdf

Silicon N-Channel Power MOSFET R CS2N60F A9H General Description VDSS 600 V CS2N60F A9H, the silicon N-channel Enhanced ID 2 A PD (TC=25 ) 24 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 3.6 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various pow

 8.16. Size:334K  wuxi china
 cs2n60a7h.pdf

Silicon N-Channel Power MOSFET R CS2N60 A7H General Description VDSS 600 V CS2N60 A7H, the silicon N-channel Enhanced ID 2 A PD (TC=25 ) 24 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 3.6 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power

 8.17. Size:234K  wuxi china
 cs2n60a3h.pdf

Silicon N-Channel Power MOSFET R CS2N60 A3H General Description VDSS 600 V CS2N60 A3H, the silicon N-channel Enhanced ID 2 A PD (TC=25 ) 35 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 3.6 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power

 8.18. Size:356K  wuxi china
 cs2n60a4t.pdf

Silicon N-Channel Power MOSFET R CS2N60 A4T General Description VDSS 600 V CS2N60 A4T, the silicon N-channel Enhanced ID 2 A PD (TC=25 ) 35 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 3.5 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power

 8.19. Size:239K  wuxi china
 cs2n60a4h.pdf

Silicon N-Channel Power MOSFET R CS2N60 A4H General Description VDSS 600 V CS2N60 A4H, the silicon N-channel Enhanced ID 2 A PD (TC=25 ) 35 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 3.6 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power

 8.20. Size:470K  convert
 cs2n60f cs2n60p cs2n60u cs2n60d cs2n60c.pdf

nvert Suzhou Convert Semiconductor Co ., Ltd. CS2N60F,CS2N60P,CS2N60U,CS2N60D,CS2N60C 600V N-Channel MOSFET FEATURES Fast switching 100% avalanche tested Improved dv/dt capability APPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (PFC) Device Marking and Package Information Device Package Marking CS2N60F

 8.21. Size:201K  inchange semiconductor
 jcs2n60f.pdf

INCHANGE Semiconductor Isc N-Channel MOSFET Transistor JCS2N60F FEATURES Low gate charge High speed switching Low on-resistance 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS High frequency switching mode power supply Electronic ballast UPS ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARA