CS2N70A3R MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: CS2N70A3R
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 35 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 700 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
|Id|ⓘ - Corriente continua de drenaje: 2 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 5.5 nS
Cossⓘ - Capacitancia de salida: 30 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 6.5 Ohm
Paquete / Cubierta: TO-251
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CS2N70A3R Datasheet (PDF)
cs2n70a3r.pdf

Silicon N-Channel Power MOSFET R CS2N70 A3R General Description VDSS 700 V CS2N70 A3R, the silicon N-channel Enhanced ID 2 A PD (TC=25) 35 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 4.7 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power s
cs2n70a3r1-g.pdf

Silicon N-Channel Power MOSFET RCS2N70 A3R1-G General Description VDSS 700 V CS2N70 A3R1-G, the silicon N-channel Enhanced ID 2 A PD (TC=25) 35 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 4.7 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various p
cs2n70a6.pdf

Silicon N-Channel Power MOSFET R CS2N70 A6 General Description VDSS 700 V CS2N70 A6, the silicon N-channel Enhanced ID 2 A PD (TC=25) 35 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 4.7 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power s
cs2n70a4.pdf

Silicon N-Channel Power MOSFET R CS2N70 A4 General Description VDSS 700 V CS2N70 A4, the silicon N-channel Enhanced ID 2 A PD (TC=25) 35 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 4.7 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power s
Otros transistores... CS2N60A4T , CS2N60A7H , CS2N60FA9H , CS2N60I , CS2N65A3 , CS2N65A3HY , CS2N65A4HY , CS2N65FA9HY , IRF4905 , CS2N70A4 , CS2N70A6 , CS2N70FA9 , CS3018W , CS30NF06L , CS3100TH , CS3103 , CS320 .
History: KNP6165A | GPT18N50GN3P | FQB13N06TM | NTMFS4835N | RD3L140SP | STB23NM60ND | 5N50L-T2Q-T
History: KNP6165A | GPT18N50GN3P | FQB13N06TM | NTMFS4835N | RD3L140SP | STB23NM60ND | 5N50L-T2Q-T



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