CS2N70A3R Specs and Replacement

Type Designator: CS2N70A3R

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 35 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 700 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 2 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 5.5 nS

Cossⓘ - Output Capacitance: 30 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 6.5 Ohm

Package: TO-251

CS2N70A3R substitution

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CS2N70A3R datasheet

 ..1. Size:248K  wuxi china
 cs2n70a3r.pdf pdf_icon

CS2N70A3R

Silicon N-Channel Power MOSFET R CS2N70 A3R General Description VDSS 700 V CS2N70 A3R, the silicon N-channel Enhanced ID 2 A PD (TC=25 ) 35 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 4.7 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power s... See More ⇒

 0.1. Size:246K  wuxi china
 cs2n70a3r1-g.pdf pdf_icon

CS2N70A3R

Silicon N-Channel Power MOSFET R CS2N70 A3R1-G General Description VDSS 700 V CS2N70 A3R1-G, the silicon N-channel Enhanced ID 2 A PD (TC=25 ) 35 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 4.7 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various p... See More ⇒

 7.1. Size:234K  wuxi china
 cs2n70a6.pdf pdf_icon

CS2N70A3R

Silicon N-Channel Power MOSFET R CS2N70 A6 General Description VDSS 700 V CS2N70 A6, the silicon N-channel Enhanced ID 2 A PD (TC=25 ) 35 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 4.7 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power s... See More ⇒

 7.2. Size:247K  wuxi china
 cs2n70a4.pdf pdf_icon

CS2N70A3R

Silicon N-Channel Power MOSFET R CS2N70 A4 General Description VDSS 700 V CS2N70 A4, the silicon N-channel Enhanced ID 2 A PD (TC=25 ) 35 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 4.7 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power s... See More ⇒

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Detailed specifications: CS2N60A4T, CS2N60A7H, CS2N60FA9H, CS2N60I, CS2N65A3, CS2N65A3HY, CS2N65A4HY, CS2N65FA9HY, IRF4905, CS2N70A4, CS2N70A6, CS2N70FA9, CS3018W, CS30NF06L, CS3100TH, CS3103, CS320

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