All MOSFET. CS2N70A3R Datasheet

 

CS2N70A3R Datasheet and Replacement


   Type Designator: CS2N70A3R
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 35 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 700 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 2 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 5.5 nS
   Cossⓘ - Output Capacitance: 30 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 6.5 Ohm
   Package: TO-251
 

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CS2N70A3R Datasheet (PDF)

 ..1. Size:248K  wuxi china
cs2n70a3r.pdf pdf_icon

CS2N70A3R

Silicon N-Channel Power MOSFET R CS2N70 A3R General Description VDSS 700 V CS2N70 A3R, the silicon N-channel Enhanced ID 2 A PD (TC=25) 35 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 4.7 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power s

 0.1. Size:246K  wuxi china
cs2n70a3r1-g.pdf pdf_icon

CS2N70A3R

Silicon N-Channel Power MOSFET RCS2N70 A3R1-G General Description VDSS 700 V CS2N70 A3R1-G, the silicon N-channel Enhanced ID 2 A PD (TC=25) 35 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 4.7 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various p

 7.1. Size:234K  wuxi china
cs2n70a6.pdf pdf_icon

CS2N70A3R

Silicon N-Channel Power MOSFET R CS2N70 A6 General Description VDSS 700 V CS2N70 A6, the silicon N-channel Enhanced ID 2 A PD (TC=25) 35 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 4.7 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power s

 7.2. Size:247K  wuxi china
cs2n70a4.pdf pdf_icon

CS2N70A3R

Silicon N-Channel Power MOSFET R CS2N70 A4 General Description VDSS 700 V CS2N70 A4, the silicon N-channel Enhanced ID 2 A PD (TC=25) 35 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 4.7 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power s

Datasheet: CS2N60A4T , CS2N60A7H , CS2N60FA9H , CS2N60I , CS2N65A3 , CS2N65A3HY , CS2N65A4HY , CS2N65FA9HY , IRF4905 , CS2N70A4 , CS2N70A6 , CS2N70FA9 , CS3018W , CS30NF06L , CS3100TH , CS3103 , CS320 .

History: UP9971 | CRJF390N65GC | UJ0100 | CPC3701C | STD120N4LF6 | IRF5803 | TMPF8N25Z

Keywords - CS2N70A3R MOSFET datasheet

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