CS2N70A4 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: CS2N70A4

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 35 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 700 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V

|Id|ⓘ - Corriente continua de drenaje: 2 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 5.5 nS

Cossⓘ - Capacitancia de salida: 30 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 6.5 Ohm

Encapsulados: TO-252

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CS2N70A4 datasheet

 ..1. Size:247K  wuxi china
 cs2n70a4.pdf pdf_icon

CS2N70A4

Silicon N-Channel Power MOSFET R CS2N70 A4 General Description VDSS 700 V CS2N70 A4, the silicon N-channel Enhanced ID 2 A PD (TC=25 ) 35 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 4.7 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power s

 7.1. Size:234K  wuxi china
 cs2n70a6.pdf pdf_icon

CS2N70A4

Silicon N-Channel Power MOSFET R CS2N70 A6 General Description VDSS 700 V CS2N70 A6, the silicon N-channel Enhanced ID 2 A PD (TC=25 ) 35 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 4.7 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power s

 7.2. Size:246K  wuxi china
 cs2n70a3r1-g.pdf pdf_icon

CS2N70A4

Silicon N-Channel Power MOSFET R CS2N70 A3R1-G General Description VDSS 700 V CS2N70 A3R1-G, the silicon N-channel Enhanced ID 2 A PD (TC=25 ) 35 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 4.7 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various p

 7.3. Size:248K  wuxi china
 cs2n70a3r.pdf pdf_icon

CS2N70A4

Silicon N-Channel Power MOSFET R CS2N70 A3R General Description VDSS 700 V CS2N70 A3R, the silicon N-channel Enhanced ID 2 A PD (TC=25 ) 35 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 4.7 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power s

MOSTRAR MÁS

Otros transistores... CS2N60A7H, CS2N60FA9H, CS2N60I, CS2N65A3, CS2N65A3HY, CS2N65A4HY, CS2N65FA9HY, CS2N70A3R, IRLB4132, CS2N70A6, CS2N70FA9, CS3018W, CS30NF06L, CS3100TH, CS3103, CS320, CS3205