CS2N70A4 MOSFET Datasheet: N-Ch, 700V, 2A. Full specification with pinout and replacement list

CS2N70A4 Specs and Replacement

   Type Designator: CS2N70A4
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel

Absolute Maximum Ratings

   Pd ⓘ - Maximum Power Dissipation: 35 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 700 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 2 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

   tr ⓘ - Rise Time: 5.5 nS
   Cossⓘ - Output Capacitance: 30 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 6.5 Ohm
   Package: TO-252

CS2N70A4 substitution

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CS2N70A4 datasheet

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Silicon N-Channel Power MOSFET R CS2N70 A4 General Description VDSS 700 V CS2N70 A4, the silicon N-channel Enhanced ID 2 A PD (TC=25 ) 35 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 4.7 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power s... See More ⇒

7.1. Size:234K wuxi china
cs2n70a6.pdf pdf_icon

Silicon N-Channel Power MOSFET R CS2N70 A6 General Description VDSS 700 V CS2N70 A6, the silicon N-channel Enhanced ID 2 A PD (TC=25 ) 35 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 4.7 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power s... See More ⇒

7.2. Size:246K wuxi china
cs2n70a3r1-g.pdf pdf_icon

Silicon N-Channel Power MOSFET R CS2N70 A3R1-G General Description VDSS 700 V CS2N70 A3R1-G, the silicon N-channel Enhanced ID 2 A PD (TC=25 ) 35 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 4.7 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various p... See More ⇒

7.3. Size:248K wuxi china
cs2n70a3r.pdf pdf_icon

Silicon N-Channel Power MOSFET R CS2N70 A3R General Description VDSS 700 V CS2N70 A3R, the silicon N-channel Enhanced ID 2 A PD (TC=25 ) 35 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 4.7 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power s... See More ⇒

Detailed specifications: CS2N60A7H , CS2N60FA9H , CS2N60I , CS2N65A3 , CS2N65A3HY , CS2N65A4HY , CS2N65FA9HY , CS2N70A3R , IRLB4132 , CS2N70A6 , CS2N70FA9 , CS3018W , CS30NF06L , CS3100TH , CS3103 , CS320 , CS3205 .