CS2N70A4 Datasheet and Replacement. Cross Reference Search

CS2N70A4 Datasheet (PDF)

..1. Size:247K wuxi china
cs2n70a4.pdf pdf_icon

Silicon N-Channel Power MOSFET R CS2N70 A4 General Description VDSS 700 V CS2N70 A4, the silicon N-channel Enhanced ID 2 A PD (TC=25) 35 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 4.7 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power s

7.1. Size:234K wuxi china
cs2n70a6.pdf pdf_icon

Silicon N-Channel Power MOSFET R CS2N70 A6 General Description VDSS 700 V CS2N70 A6, the silicon N-channel Enhanced ID 2 A PD (TC=25) 35 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 4.7 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power s

7.2. Size:246K wuxi china
cs2n70a3r1-g.pdf pdf_icon

Silicon N-Channel Power MOSFET RCS2N70 A3R1-G General Description VDSS 700 V CS2N70 A3R1-G, the silicon N-channel Enhanced ID 2 A PD (TC=25) 35 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 4.7 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various p

7.3. Size:248K wuxi china
cs2n70a3r.pdf pdf_icon

Silicon N-Channel Power MOSFET R CS2N70 A3R General Description VDSS 700 V CS2N70 A3R, the silicon N-channel Enhanced ID 2 A PD (TC=25) 35 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 4.7 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power s

Datasheet: CS2N60A7H , CS2N60FA9H , CS2N60I , CS2N65A3 , CS2N65A3HY , CS2N65A4HY , CS2N65FA9HY , CS2N70A3R , IRLB4132 , CS2N70A6 , CS2N70FA9 , CS3018W , CS30NF06L , CS3100TH , CS3103 , CS320 , CS3205 .