NDS0610 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: NDS0610
Tipo de FET: MOSFET
Polaridad de transistor: P
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 0.36 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 60 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 0.12 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 10 Ohm
Paquete / Cubierta: SOT23
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NDS0610 Datasheet (PDF)
nds0610.pdf
July 2002 NDS0610 P-Channel Enhancement Mode Field Effect Transistor Features General Description These P-Channel enhancement mode field effect -0.12A, -60V. RDS(ON) = 10 @ VGS = -10 V transistors are produced using Fairchilds proprietary, RDS(ON) = 20 @ VGS = -4.5 V high cell density, DMOS technology. This very high density process has been designed to minim
nds0610.pdf
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nds0605.pdf
July 2002 NDS0605 P-Channel Enhancement Mode Field Effect Transistor Features General Description These P-Channel enhancement mode field effect -0.18A, -60V. RDS(ON) = 5 @ VGS = -10 V transistors are produced using Fairchilds proprietary, Voltage controlled p-channel small signal switch high cell density, DMOS technology. This very high density process has be
Otros transistores... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
Liste
Recientemente añadidas las descripciónes de los transistores:
MOSFET: AOUS66923 | AOUS66920 | AOUS66620 | AOUS66616 | AOUS66416 | AOUS66414 | AOTE32136C | AOTE21115C | AOTS32338C | AOTS32334C | AOTS26108 | AOTS21319C | AOTS21313C | AOTS21311C | AOTS21115C | AOTL66918