NDS0610 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: NDS0610
Código: 610
Tipo de FET: MOSFET
Polaridad de transistor: P
ESPECIFICACIONES MÁXIMAS
Máxima disipación de potencia (Pd): 0.36 W
Voltaje máximo drenador - fuente |Vds|: 60 V
Voltaje máximo fuente - puerta |Vgs|: 20 V
Corriente continua de drenaje |Id|: 0.12 A
Temperatura máxima de unión (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Tensión umbral entre puerta y fuente |Vgs(th)|: 3.5 V
Carga de la puerta (Qg): 1.8 nC
Resistencia entre drenaje y fuente RDS(on): 10 Ohm
Paquete / Cubierta: SOT23
Búsqueda de reemplazo de MOSFET NDS0610
NDS0610 Datasheet (PDF)
nds0610.pdf
July 2002 NDS0610 P-Channel Enhancement Mode Field Effect Transistor Features General Description These P-Channel enhancement mode field effect -0.12A, -60V. RDS(ON) = 10 @ VGS = -10 V transistors are produced using Fairchilds proprietary, RDS(ON) = 20 @ VGS = -4.5 V high cell density, DMOS technology. This very high density process has been designed to minim
nds0610.pdf
Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and oth
nds0605.pdf
July 2002 NDS0605 P-Channel Enhancement Mode Field Effect Transistor Features General Description These P-Channel enhancement mode field effect -0.18A, -60V. RDS(ON) = 5 @ VGS = -10 V transistors are produced using Fairchilds proprietary, Voltage controlled p-channel small signal switch high cell density, DMOS technology. This very high density process has be
Otros transistores... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , MMIS60R580P , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
