NDS0610 Datasheet. Specs and Replacement

Type Designator: NDS0610  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 0.36 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 0.12 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

RDSonⓘ - Maximum Drain-Source On-State Resistance: 10 Ohm

Package: SOT23

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NDS0610 datasheet

 ..1. Size:140K  fairchild semi
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NDS0610

July 2002 NDS0610 P-Channel Enhancement Mode Field Effect Transistor Features General Description These P-Channel enhancement mode field effect -0.12A, -60V. RDS(ON) = 10 @ VGS = -10 V transistors are produced using Fairchild s proprietary, RDS(ON) = 20 @ VGS = -4.5 V high cell density, DMOS technology. This very high density process has been designed to minim... See More ⇒

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NDS0610

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and oth... See More ⇒

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 nds0605.pdf pdf_icon

NDS0610

July 2002 NDS0605 P-Channel Enhancement Mode Field Effect Transistor Features General Description These P-Channel enhancement mode field effect -0.18A, -60V. RDS(ON) = 5 @ VGS = -10 V transistors are produced using Fairchild s proprietary, Voltage controlled p-channel small signal switch high cell density, DMOS technology. This very high density process has be... See More ⇒

Detailed specifications: NDP7052L, NDP7060, NDP7060L, NDP7061, NDP7061L, NDP708A, NDP710A, NDS0605, STF13NM60N, NDS332P, NDS351AN, NDS352AP, NDS355AN, NDS356AP, NDS7002A, NDS8410A, NDS8425

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