CS3R50FA9 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: CS3R50FA9

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 24 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 500 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V

|Id|ⓘ - Corriente continua de drenaje: 3 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 14 nS

Cossⓘ - Capacitancia de salida: 34 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 3 Ohm

Encapsulados: TO-220F

 Búsqueda de reemplazo de CS3R50FA9 MOSFET

- Selecciónⓘ de transistores por parámetros

 

CS3R50FA9 datasheet

 ..1. Size:240K  wuxi china
 cs3r50fa9.pdf pdf_icon

CS3R50FA9

Silicon N-Channel Power MOSFET R CS3R50F A9 General Description VDSS 500 V CS3R50F A9, the silicon N-channel Enhanced ID 3 A PD (TC=25 ) 24 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 2.4 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various powe

 7.1. Size:241K  crhj
 cs3r50f a9.pdf pdf_icon

CS3R50FA9

Silicon N-Channel Power MOSFET R CS3R50F A9 General Description VDSS 500 V CS3R50F A9, the silicon N-channel Enhanced ID 3 A PD (TC=25 ) 24 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 2.4 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various powe

 8.1. Size:250K  crhj
 cs3r50 a4.pdf pdf_icon

CS3R50FA9

Silicon N-Channel Power MOSFET R CS3R50 A4 General Description VDSS 500 V CS3R50 A4, the silicon N-channel Enhanced ID 3 A PD (TC=25 ) 35 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 2.4 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power s

 8.2. Size:258K  crhj
 cs3r50 a3.pdf pdf_icon

CS3R50FA9

Silicon N-Channel Power MOSFET R CS3R50 A3 General Description VDSS 500 V CS3R50 A3, the silicon N-channel Enhanced ID 3 A PD (TC=25 ) 35 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 2.4 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power swi

MOSTRAR MÁS

Otros transistores... CS3N80A4, CS3N80A8, CS3N80FA9, CS3N90A3H, CS3N90A4H, CS3N90A8, CS3N90FA9H, CS3R50A3, STF13NM60N, CS40N06, CS4482DY, CS4486, CS47N60, CS48N18, CS48N75, CS48N78, CS48N80