CS3R50FA9 Specs and Replacement

Type Designator: CS3R50FA9

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 24 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 3 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 14 nS

Cossⓘ - Output Capacitance: 34 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 3 Ohm

Package: TO-220F

CS3R50FA9 substitution

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CS3R50FA9 datasheet

 ..1. Size:240K  wuxi china
 cs3r50fa9.pdf pdf_icon

CS3R50FA9

Silicon N-Channel Power MOSFET R CS3R50F A9 General Description VDSS 500 V CS3R50F A9, the silicon N-channel Enhanced ID 3 A PD (TC=25 ) 24 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 2.4 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various powe... See More ⇒

 7.1. Size:241K  crhj
 cs3r50f a9.pdf pdf_icon

CS3R50FA9

Silicon N-Channel Power MOSFET R CS3R50F A9 General Description VDSS 500 V CS3R50F A9, the silicon N-channel Enhanced ID 3 A PD (TC=25 ) 24 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 2.4 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various powe... See More ⇒

 8.1. Size:250K  crhj
 cs3r50 a4.pdf pdf_icon

CS3R50FA9

Silicon N-Channel Power MOSFET R CS3R50 A4 General Description VDSS 500 V CS3R50 A4, the silicon N-channel Enhanced ID 3 A PD (TC=25 ) 35 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 2.4 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power s... See More ⇒

 8.2. Size:258K  crhj
 cs3r50 a3.pdf pdf_icon

CS3R50FA9

Silicon N-Channel Power MOSFET R CS3R50 A3 General Description VDSS 500 V CS3R50 A3, the silicon N-channel Enhanced ID 3 A PD (TC=25 ) 35 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 2.4 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power swi... See More ⇒

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Detailed specifications: CS3N80A4, CS3N80A8, CS3N80FA9, CS3N90A3H, CS3N90A4H, CS3N90A8, CS3N90FA9H, CS3R50A3, STF13NM60N, CS40N06, CS4482DY, CS4486, CS47N60, CS48N18, CS48N75, CS48N78, CS48N80

Keywords - CS3R50FA9 MOSFET specs

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