All MOSFET. CS3R50FA9 Datasheet

 

CS3R50FA9 Datasheet and Replacement


   Type Designator: CS3R50FA9
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 24 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 3 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 14 nS
   Cossⓘ - Output Capacitance: 34 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 3 Ohm
   Package: TO-220F
 

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CS3R50FA9 Datasheet (PDF)

 ..1. Size:240K  wuxi china
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CS3R50FA9

Silicon N-Channel Power MOSFET R CS3R50F A9 General Description VDSS 500 V CS3R50F A9, the silicon N-channel Enhanced ID 3 A PD (TC=25) 24 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 2.4 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various powe

 7.1. Size:241K  crhj
 cs3r50f a9.pdf pdf_icon

CS3R50FA9

Silicon N-Channel Power MOSFET R CS3R50F A9 General Description VDSS 500 V CS3R50F A9, the silicon N-channel Enhanced ID 3 A PD (TC=25) 24 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 2.4 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various powe

 8.1. Size:250K  crhj
 cs3r50 a4.pdf pdf_icon

CS3R50FA9

Silicon N-Channel Power MOSFET R CS3R50 A4 General Description VDSS 500 V CS3R50 A4, the silicon N-channel Enhanced ID 3 A PD (TC=25) 35 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 2.4 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power s

 8.2. Size:258K  crhj
 cs3r50 a3.pdf pdf_icon

CS3R50FA9

Silicon N-Channel Power MOSFET R CS3R50 A3 General Description VDSS 500 V CS3R50 A3, the silicon N-channel Enhanced ID 3 A PD (TC=25) 35 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 2.4 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power swi

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Datasheet: CS3N80A4 , CS3N80A8 , CS3N80FA9 , CS3N90A3H , CS3N90A4H , CS3N90A8 , CS3N90FA9H , CS3R50A3 , IRF2807 , CS40N06 , CS4482DY , CS4486 , CS47N60 , CS48N18 , CS48N75 , CS48N78 , CS48N80 .

History: NDS351N | HUF75337S3 | PT9926 | HUFA75321D3S | SFW025N100C3 | IRFZ46ZS | WM01P41M

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