CS48N75 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: CS48N75
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 85 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 70 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 25 V
|Id|ⓘ - Corriente continua de drenaje: 68 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 11 nS
Cossⓘ - Capacitancia de salida: 360 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0084 Ohm
Encapsulados: TO-220
Búsqueda de reemplazo de CS48N75 MOSFET
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CS48N75 datasheet
cs48n75.pdf
CS48N75 Pb CS48N75 Pb Free Plating Product 70V,68A N-Channel Trench Process Power MOSFET General Description The is N-channel MOS Field Effect Transistor CS48N75 designed for high current switching applications. Rugged EAS CS48N75 (TO-220 HeatSink) capability and ultra low RDS(ON) is suitable for PWM, load switching especially for E-Bike controller applications. Features DS
cs48n78.pdf
CS48N78 Pb CS48N78 Pb Free Plating Product 70V,80A N-Channel Trench Process Power MOSFET General Description The CS48N78 is N-channel MOS Field Effect Transistor CS48N78 designed for high current switching applications. Rugged EAS (TO-220 HeatSink) capability and ultra low RDS(ON) is suitable for PWM, load switching especially for E-Bike controller applications. Features D
cs48n18.pdf
CS48N18 Pb CS48N18 Pb Free Plating Product 70V,158A N-Channel Trench Process Power MOSFET General Description CS48N18 The CS48N18 is N-channel MOS Field Effect Transistor (TO-220 HeatSink) designed for high current switching applications. Rugged EAS capability and ultra low RDS(ON) is suitable for PWM, load switching especially for E-Bike controller applications. DS G Fea
Otros transistores... CS3N90FA9H, CS3R50A3, CS3R50FA9, CS40N06, CS4482DY, CS4486, CS47N60, CS48N18, AO3400A, CS48N78, CS48N80, CS48N88, CS4905S, CS4J60A3-G, CS4J60B3-G, CS4N60, CS4N60A3HD
History: IRFY430CM | VBZA4850
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