Справочник MOSFET. CS48N75

 

CS48N75 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: CS48N75
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 85 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 70 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 25 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 4 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 68 A
   Tjⓘ - Максимальная температура канала: 175 °C
   Qgⓘ - Общий заряд затвора: 64 nC
   trⓘ - Время нарастания: 11 ns
   Cossⓘ - Выходная емкость: 360 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.0084 Ohm
   Тип корпуса: TO-220

 Аналог (замена) для CS48N75

 

 

CS48N75 Datasheet (PDF)

 ..1. Size:998K  thinkisemi
 cs48n75.pdf

CS48N75 CS48N75

CS48N75 PbCS48N75Pb Free Plating Product70V,68A N-Channel Trench Process Power MOSFETGeneral Description The is N-channel MOS Field Effect Transistor CS48N75designed for high current switching applications. Rugged EAS CS48N75(TO-220 HeatSink)capability and ultra low RDS(ON) is suitable for PWM, load switching especially for E-Bike controller applications. Features DS

 8.1. Size:751K  thinkisemi
 cs48n78.pdf

CS48N75 CS48N75

CS48N78 PbCS48N78Pb Free Plating Product70V,80A N-Channel Trench Process Power MOSFETGeneral Description The CS48N78 is N-channel MOS Field Effect Transistor CS48N78designed for high current switching applications. Rugged EAS (TO-220 HeatSink)capability and ultra low RDS(ON) is suitable for PWM, load switching especially for E-Bike controller applications. Features D

 9.1. Size:748K  thinkisemi
 cs48n80.pdf

CS48N75 CS48N75

CS48N80 PbCS48N80Pb Free Plating Product70V,87A N-Channel Trench Process Power MOSFETGeneral Description The CS48N80 is N-channel MOS Field Effect Transistor designed for high current switching applications. Rugged EAS CS48N80capability and ultra low RDS(ON) is suitable for PWM, load (TO-220 HeatSink)switching especially for E-Bike controller applications. Features

 9.2. Size:781K  thinkisemi
 cs48n18.pdf

CS48N75 CS48N75

CS48N18 PbCS48N18Pb Free Plating Product70V,158A N-Channel Trench Process Power MOSFETGeneral Description CS48N18The CS48N18 is N-channel MOS Field Effect Transistor (TO-220 HeatSink)designed for high current switching applications. Rugged EAS capability and ultra low RDS(ON) is suitable for PWM, load switching especially for E-Bike controller applications. DSGFea

 9.3. Size:754K  thinkisemi
 cs48n88.pdf

CS48N75 CS48N75

CS48N88 PbCS48N88Pb Free Plating Product70V,92A N-Channel Trench Process Power MOSFETGeneral Description The CS48N88 is N-channel MOS Field Effect Transistor CS48N88designed for high current switching applications. Rugged EAS (TO-220 HeatSink)capability and ultra low RDS(ON) is suitable for PWM, load switching especially for E-Bike controller applications. Features D

Другие MOSFET... IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 20N50 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .

 

 
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