CS4N60F Todos los transistores

 

CS4N60F MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: CS4N60F
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 50 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 600 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 4 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 35 nS
   Cossⓘ - Capacitancia de salida: 60 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 2 Ohm
   Paquete / Cubierta: TO-220F
 

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CS4N60F Datasheet (PDF)

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cs4n60f a9r.pdf pdf_icon

CS4N60F

Silicon N-Channel Power MOSFET R CS4N60F A9R General Description VDSS 600 V CS4N60F A9R, the silicon N-channel Enhanced ID 4 A PD(TC=25) 30 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 2.1 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power

 ..2. Size:344K  crhj
cs4n60f a9tdy.pdf pdf_icon

CS4N60F

Silicon N-Channel Power MOSFET R CS4N60F A9TDY General Description VDSS 600 V CS4N60F A9TDY, the silicon N-channel ID 4 A PD(TC=25) 30 W Enhanced VDMOSFETs, is obtained by the self-aligned RDS(ON)Typ 2.0 planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various

 ..3. Size:343K  crhj
cs4n60f a9hd.pdf pdf_icon

CS4N60F

Silicon N-Channel Power MOSFET R CS4N60F A9HD General Description VDSS 600 V CS4N60F A9HD, the silicon N-channel Enhanced ID 4 A PD(TC=25) 30 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 1.8 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various p

 ..4. Size:170K  lzg
cs4n60f.pdf pdf_icon

CS4N60F

BRF4N60(CS4N60F) N-CHANNEL MOSFET/N MOS : DC/DC Purpose: These devices are well suited for high efficiency switching DC/DC converters and switch mode power supplies. : ,, Features: Low gate charge, low crss, fast switching. /Absolute maximum ratings(Ta=25

Otros transistores... CS4N60 , CS4N60A3HD , CS4N60A3TDY , CS4N60A4HD , CS4N60A4TDY , CS4N60A7HD , CS4N60A8HD , CS4N60ARRD , 2N7002 , CS4N60FA9HD , CS4N60FA9TDY , CS4N65A3HD , CS4N65A3HDY , CS4N65A3TDY , CS4N65A4HDY , CS4N65A4TDY , CS4N65A8HD .

History: IXFN240N15T2 | WMQ28N03T1 | LPN1010C | CS4N65 | FHP110N8F5A | STP11NB40FP | IPI90N06S4L-04

 

 
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