CS4N60F PDF and Equivalents Search

 ..1. Size:264K  crhj
 cs4n60f a9r.pdf

Silicon N-Channel Power MOSFET R CS4N60F A9R General Description VDSS 600 V CS4N60F A9R, the silicon N-channel Enhanced ID 4 A PD(TC=25 ) 30 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 2.1 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power... See More ⇒

 ..2. Size:344K  crhj
 cs4n60f a9tdy.pdf

Silicon N-Channel Power MOSFET R CS4N60F A9TDY General Description VDSS 600 V CS4N60F A9TDY, the silicon N-channel ID 4 A PD(TC=25 ) 30 W Enhanced VDMOSFETs, is obtained by the self-aligned RDS(ON)Typ 2.0 planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various ... See More ⇒

 ..3. Size:343K  crhj
 cs4n60f a9hd.pdf

Silicon N-Channel Power MOSFET R CS4N60F A9HD General Description VDSS 600 V CS4N60F A9HD, the silicon N-channel Enhanced ID 4 A PD(TC=25 ) 30 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 1.8 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various p... See More ⇒

 ..4. Size:170K  lzg
 cs4n60f.pdf

BRF4N60(CS4N60F) N-CHANNEL MOSFET/N MOS DC/DC Purpose These devices are well suited for high efficiency switching DC/DC converters and switch mode power supplies. , , Features Low gate charge, low crss, fast switching. /Absolute maximum ratings(Ta=25 ... See More ⇒

 ..5. Size:704K  convert
 cs4n60f cs4n60p cs4n60u cs4n60d.pdf

nvert Suzhou Convert Semiconductor Co ., Ltd. CS4N60F,CS4N60P,CS4N60U,CS4N60D 600V N-Channel MOSFET FEATURES Fast switching 100% avalanche tested Improved dv/dt capability APPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (PFC) Device Marking and Package Information Device Package Marking CS4N60F TO-220F... See More ⇒

 0.1. Size:1019K  1
 jcs4n60vb jcs4n60rb jcs4n60bb jcs4n60cb jcs4n60fb.pdf

N R N-CHANNEL MOSFET JCS4N60B Package MAIN CHARACTERISTICS 4.0 A ID 600 V VDSS Rdson Vgs=10V 2.4 13.3nC Qg APPLICATIONS High efficiency switch mode power supplies Electronic lamp ballasts UPS based on half bridge UPS ... See More ⇒

 0.2. Size:1045K  jilin sino
 jcs4n60vb jcs4n60rb jcs4n60bb jcs4n60sb jcs4n60cb jcs4n60fb.pdf

N R N-CHANNEL MOSFET JCS4N60B Package MAIN CHARACTERISTICS ID 4.0 A VDSS 600 V 2.4 Rdson Vgs=10V Qg 18.1nC APPLICATIONS High efficiency switch mode power supplies Electronic lamp ballasts LED based on half bridge LED power su... See More ⇒

 0.3. Size:1304K  jilin sino
 jcs4n60v jcs4n60c jcs4n60f jcs4n60r jcs4n60b.pdf

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 0.4. Size:1259K  jilin sino
 jcs4n60f jcs4n60f jcs4n60v jcs4n60r jcs4n60b.pdf

R JCS4N60E JCS4N60E MAIN CHARACTERISTICS Package ID 4.0 A VDSS 600 V Rdson_max 2.35 Vgs=10V Qg-typ 11.8nC APPLICATIONS High frequency switching mode power supply Electronic ballast LED LED power supply FEATURES Low ... See More ⇒

 0.5. Size:948K  jilin sino
 jcs4n60f.pdf

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 0.6. Size:2765K  citcorp
 cs4n60fa9hd.pdf

CS4N60FA9HD 600V Silicon N-Channel Power MOSFET Features Outline Fast switching. TO-220F ESD improved capability. 0.189(4.80) 0.173(4.40) Low gate charge. 0.409(10.40) 0.378(9.60) 0.114(2.90) Low reverse transfer capacitances. 0.098(2.50) 100% single pulse avalanche energy test. 0.638(16.20) 0.606(15.40) Marking code Mechanical data G D S Ep... See More ⇒

 0.7. Size:344K  wuxi china
 cs4n60fa9tdy.pdf

Silicon N-Channel Power MOSFET R CS4N60F A9TDY General Description VDSS 600 V CS4N60F A9TDY, the silicon N-channel ID 4 A PD(TC=25 ) 30 W Enhanced VDMOSFETs, is obtained by the self-aligned RDS(ON)Typ 2.0 planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various ... See More ⇒

 0.8. Size:315K  wuxi china
 cs4n60fa9r.pdf

Silicon N-Channel Power MOSFET R CS4N60F A9R General Description VDSS 600 V CS4N60F A9R, the silicon N-channel Enhanced ID 4 A PD(TC=25 ) 30 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 2.1 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power... See More ⇒