CS4N65F Todos los transistores

 ..1. Size:263K  crhj
 cs4n65f a9r.pdf

Silicon N-Channel Power MOSFET R CS4N65F A9R General Description VDSS 650 V CS4N65F A9R, the silicon N-channel Enhanced ID 4 A PD(TC=25 ) 30 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 2.4 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power

 ..2. Size:171K  lzg
 cs4n65f.pdf

BRF4N65(CS4N65F) N-CHANNEL MOSFET/N MOS DC/DC Purpose These devices are well suited for high efficiency switching DC/DC converters and switch mode power supplies. , , Features Low gate charge, low crss, fast switching. /Absolute maximum ratings(Ta=25

 ..3. Size:703K  convert
 cs4n65f cs4n65p cs4n65u cs4n65d.pdf

nvert Suzhou Convert Semiconductor Co ., Ltd. CS4N65F,CS4N65P,CS4N65U,CS4N65D 650V N-Channel MOSFET FEATURES Fast switching 100% avalanche tested Improved dv/dt capability APPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (PFC) Device Marking and Package Information Device Package Marking CS4N65F TO-220F

 0.1. Size:831K  jilin sino
 jcs4n65vb jcs4n65rb jcs4n65cb jcs4n65fb.pdf

N R N-CHANNEL MOSFET JCS4N65B Package MAIN CHARACTERISTICS 4.0 A ID 650 V VDSS Rdson 2.5 @Vgs=10V 13.3nC Qg APPLICATIONS High efficiency switch mode power supplies Electronic lamp ballasts UPS based on half bridge UPS

 0.2. Size:1447K  jilin sino
 jcs4n65f jcs4n65v jcs4n65r jcs4n65b jcs4n65m jcs4n65mf.pdf

R JCS4N65E JCS4N65E MAIN CHARACTERISTICS Package ID 4.0 A VDSS 650 V Rdson_max 2.5 Vgs=10V Qg-typ 11.9nC APPLICATIONS High frequency switching mode power supply Electronic ballast LED LED power supply FEATURES Low gate

 0.3. Size:779K  jilin sino
 jcs4n65f-c-r-v.pdf

 0.4. Size:1598K  jilin sino
 jcs4n65vb jcs4n65rb jcs4n65bb jcs4n65sb jcs4n65cb jcs4n65fb.pdf

N R N-CHANNEL MOSFET JCS4N65B Package MAIN CHARACTERISTICS ID 4.0 A VDSS 650 V Rdson Vgs=10V 2.4 -Max Qg-Typ 16.3nC APPLICATIONS High efficiency switch mode power supplies Electronic lamp ballasts UPS based on half bridge UP

 0.5. Size:1866K  jilin sino
 jcs4n65v jcs4n65r jcs4n65c jcs4n65f jcs4n65b jcs4n65m jcs4n65mf.pdf

R JCS4N65C JCS4N65C MAIN CHARACTERISTICS Package ID 4.0 A VDSS 650 V Rdson_ Typ 2.1 Vgs=1 Max 2.6 0V Qg-typ 14nC APPLICATIONS High frequency switching mode power supply Electronic ballast LED LED power supply FEATURES Low g

 0.6. Size:234K  wuxi china
 cs4n65fa9hd.pdf

Silicon N-Channel Power MOSFET R CS4N65F A9HD General Description VDSS 650 V CS4N65F A9HD, the silicon N-channel Enhanced ID 4 A PD(TC=25 ) 30 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 2 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various powe