All MOSFET. CS4N65F Datasheet


CS4N65F MOSFET. Datasheet pdf. Equivalent

Type Designator: CS4N65F

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 33 W

Maximum Drain-Source Voltage |Vds|: 650 V

Maximum Gate-Source Voltage |Vgs|: 30 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V

Maximum Drain Current |Id|: 4 A

Maximum Junction Temperature (Tj): 150 °C

Rise Time (tr): 35 nS

Drain-Source Capacitance (Cd): 60 pF

Maximum Drain-Source On-State Resistance (Rds): 3 Ohm

Package: TO-220F

CS4N65F Transistor Equivalent Substitute - MOSFET Cross-Reference Search


CS4N65F Datasheet (PDF)

1.1. jcs4n65f-c-r-v.pdf Size:779K _update


N 沟道增强型场效应晶体管 R N-CHANNEL MOSFET JCS4N65C 封装 Package 主要参数 MAIN CHARACTERISTICS 4.0 A ID 650 V VDSS Rdson(Vgs=10V) 2.5Ω 9nC Qg APPLICATIONS 用途 High frequency switching 高频开关电源 mode power supply 电子镇流器 Electronic ballast UPS 电源 UPS 产品特性 FEATURES 低栅极电荷

1.2. cs4n65f.pdf Size:171K _update_mosfet


BRF4N65(CS4N65F) N-CHANNEL MOSFET/N 沟道 MOS 晶体管 用途: 用于高功率 DC/DC 转换和功率开关。 Purpose: These devices are well suited for high efficiency switching DC/DC converters and switch mode power supplies. 特点: 低栅电荷,低反馈电容,开关速度快。 Features: Low gate charge, low crss, fast switching. 极限参数/Absolute maximum ratings(Ta=25℃

 1.3. cs4n65f a9r.pdf Size:263K _crhj


Silicon N-Channel Power MOSFET R ○ CS4N65F A9R General Description: VDSS 650 V CS4N65F A9R, the silicon N-channel Enhanced ID 4 A PD(TC=25℃) 30 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 2.4 Ω which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , 2N7002 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .


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