CS4N70ARHD Todos los transistores

 

CS4N70ARHD MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: CS4N70ARHD

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 70 W

Tensión drenaje-fuente (Vds): 700 V

Tensión compuerta-fuente (Vgs): 30 V

Corriente continua de drenaje (Id): 4 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Tensión umbral compuerta-fuente Vgs(th): 4 V

Carga de compuerta (Qg): 15 nC

Tiempo de elevación (tr): 17 nS

Conductancia de drenaje-sustrato (Cd): 50 pF

Resistencia drenaje-fuente RDS(on): 2.8 Ohm

Empaquetado / Estuche: TO-262

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CS4N70ARHD Datasheet (PDF)

1.1. cs4n70arhd.pdf Size:930K _update_mosfet

CS4N70ARHD
CS4N70ARHD

Silicon N-Channel Power MOSFET R ○ CS4N70 ARHD General Description: VDSS 700 V CS4N70 ARHD, the silicon N-channel Enhanced ID 4 A PD(TC=25℃) 70 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 2.5 Ω which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various pow

4.1. cs4n70fa9d.pdf Size:930K _update_mosfet

CS4N70ARHD
CS4N70ARHD

Silicon N-Channel Power MOSFET R ○ CS4N70F A9D General Description: VDSS 700 V CS4N70F A9D, the silicon N-channel Enhanced ID 4 A PD(TC=25℃) 30 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 2.5 Ω which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various pow

4.2. cs4n70 arhd.pdf Size:930K _crhj

CS4N70ARHD
CS4N70ARHD

Silicon N-Channel Power MOSFET R ○ CS4N70 ARHD General Description: VDSS 700 V CS4N70 ARHD, the silicon N-channel Enhanced ID 4 A PD(TC=25℃) 70 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 2.5 Ω which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various pow

 4.3. cs4n70 a4hd.pdf Size:428K _crhj

CS4N70ARHD
CS4N70ARHD

Silicon N-Channel Power MOSFET R ○ CS4N70 A4HD General Description: VDSS 700 V CS4N70 A4HD, the silicon N-channel Enhanced ID 4 A PD(TC=25℃) 70 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 2.5 Ω which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various pow

4.4. cs4n70 a3d.pdf Size:427K _crhj

CS4N70ARHD
CS4N70ARHD

Silicon N-Channel Power MOSFET R ○ CS4N70 A3D General Description: VDSS 700 V CS4N70 A3D, the silicon N-channel Enhanced ID 4 A PD(TC=25℃) 70 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 2.5 Ω which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power sw

 4.5. cs4n70f a9d.pdf Size:930K _crhj

CS4N70ARHD
CS4N70ARHD

Silicon N-Channel Power MOSFET R ○ CS4N70F A9D General Description: VDSS 700 V CS4N70F A9D, the silicon N-channel Enhanced ID 4 A PD(TC=25℃) 30 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 2.5 Ω which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various pow

4.6. cs4n70 a3hd-g.pdf Size:432K _crhj

CS4N70ARHD
CS4N70ARHD

Silicon N-Channel Power MOSFET R ○ CS4N70 A3HD-G General Description: VDSS 700 V CS4N70 A3HD-G, the silicon N-channel Enhanced ID 4 A PD(TC=25℃) 70 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 2.5 Ω which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various p

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